Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A / cm 2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).

Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An ${\mathrm{Al}}_2{\mathrm{O}}_3$ layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.

We investigate the index sensing characteristics of plasmonic arrays based on square lattice slablike gold nanorings (NRs) with different ring widths. The gold NR arrays exhibit two extinction peaks in the visible and near-infrared corresponding to antibonding and bonding modes. Redshift and blueshift in antibonding and bonding modes when broadening the average ring width are observed. We experimentally demonstrate the sensitivity of bonding mode can be tuned by varying the average ring width. High sensitivity of 691 nm per refractive index unit is obtained for NRs with 199 nm average ring width.

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al₂O₃ film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

We propose and demonstrate a trapping configuration integrating coupled waveguides and gold bowtie structures to form near-field plasmonic tweezers. Compared with excitation from the top, waves coupled through the waveguide can excite specific bowties on the waveguide and trap particles precisely. Thus this scheme is more efficient and compact, and will assist the circuit design on a chip. With lightning rod and gap effects, the gold bowtie structures can generate highly concentrated resonant fields and induce trapping forces as strong as 652 pN W⁻¹ on particles with diameters as small as 20 nm. This trapping capability is investigated numerically and verified experimentally with observations of the transport, trapping, and release of particles in the system.