Peng Xiong

Prof. Dr. Peng Xiong

Department of Physics, Florida State University, Tallahassee, FL 32306, USA
orcid

Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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22 June 2011 in Nano Letters
Verified
Journal Article
Closed access
LCLin Chen
Lin Chen
XYXiang Yang
Xiang Yang
FYFuhua Yang
Fuhua Yang
JZJianhua Zhao
Jianhua Zhao
JMJennifer Misuraca
Jennifer Misuraca
SMStephan von Molnár
Stephan von Molnár

30 April 2002 in Physical Review Letters
Verified
Journal Article
Closed access
PDF file
JPJ. S. Parker
J. S. Parker
SWS. M. Watts
S. M. Watts
PIP. G. Ivanov
P. G. Ivanov
PXPeng Xiong
Peng Xiong
We report a systematic study of the spin polarization of epitaxial CrO2 films at and across an interface using planar junctions with a superconducting counterelectrode. By chemical modification of the CrO2 surface before the deposition of the superconductor, junctions with a wide range of barrier strength were obtained. Analysis of the conductance data on these junctions, especially under Zeeman splitting of the superconducting density of states, yields consistent, close to full spin polarization for CrO2 regardless of the barrier strength.

26 June 2006 in Applied Physics Letters
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Journal Article
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LFL. L. Fields
L. L. Fields
Jim ZhengJim Zheng
Jim Zheng
YCYi Cheng
Yi Cheng
PXPeng Xiong
Peng Xiong
Hydrogen sensors have been fabricated from single SnO2 nanobelts synthesized via catalyst-free thermal evaporation. Ohmic contacts were defined on individual SnO2 nanobelts by photolithography and pulsed laser deposition of RuO2 . The sensitivity and response time of the sensors, without any catalyst on the surface, to 2% hydrogen at temperatures between 25 and 80°C were measured. Sensitivity greater than 50%, response time <220s , and power consumption <10nW at room temperature were demonstrated.

31 July 2003 in Physical Review Letters
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Journal Article
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JBJ. G. Braden
J. G. Braden
JPJ. S. Parker
J. S. Parker
PXPeng Xiong
Peng Xiong
SCSeung-Hyun Chun
Seung-Hyun Chun
NSN. Samarth
N. Samarth
We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1−xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga0.95Mn0.05As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.

14 February 2014 in Nano Letters
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Journal Article
Closed access
DPDong Pan
Dong Pan
MFMengqi Fu
Mengqi Fu
XYXuezhe Yu
Xuezhe Yu
XWXiaolei Wang
Xiaolei Wang
LZLijun Zhu
Lijun Zhu
JZJianhua Zhao
Jianhua Zhao

24 August 2023 in Nature Communications
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Journal Article
Open access
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YAYuwaraj Adhikari
Yuwaraj Adhikari
TLTianhan Liu
Tianhan Liu
HWHailong Wang
Hailong Wang
ZHZhenqi Hua
Zhenqi Hua
HLHaoyang Liu
Haoyang Liu
PXPeng Xiong
Peng Xiong
Chirality has been a property of central importance in physics, chemistry and biology for more than a century. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive, given the negligible spin-orbit coupling (SOC) in organic molecules. In this work, we address this issue via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting SOC strengths. The experiment reveals that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results illustrate the essential role of SOC in the metal electrode for the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior.