The strategic integration of low‐dimensional InAs‐based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs‐based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single‐atomic‐layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs‐based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs‐based materials and the working principles of InAs‐based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs‐based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi‐functional applications, and incorporating deep learning into first‐principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

Hexagonal Boron Nitride (h-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of few-layer h-BN on AlGaN MIS devices—particularly with varying Al compositions—remains unexplored. In this work, we systematically investigate the Fowler–Nordheim tunneling effect in few-layer h-BN integrated into AlGaN MIS architectures, focusing on the critical roles h-BN layer count, AlGaN alloy composition, and interfacial properties in determining device performance. Through combined simulations and experiments, we accurately determine key physical parameters, such as the layer-dependent effective mass and band alignment, and analyze their role in optimizing MIS device characteristics. Our findings reveal that the 2D h-BN insulating layer not only enhances breakdown voltage and reduces leakage current but also mitigates interfacial defects and Shockley–Read–Hall recombination, enabling high-performance AlGaN MIS devices under elevated voltage and power conditions. This study provides fundamental insights into h-BN-based AlGaN MIS structures and advances their applications in next-generation high-power and high-frequency electronics.

The self-activated halotungstate Ba₃WO₅Cl₂ was successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis (XRD) confirmed the formation of a single-phase compound with a monoclinic crystal structure, ensuring the material’s purity and structural integrity. The luminescence properties of Ba₃WO₅Cl₂ were thoroughly investigated using both optical and laser-excitation spectroscopy. The photoluminescent excitation (PLE) and emission (PL) spectra, together with the corresponding decay curves, were recorded across a broad temperature range, from 10 K to 480 K. The charge transfer band (CTB) of the [WO₅Cl] octahedron was clearly identified in both the PL and the PLE spectra under ultraviolet light excitation, indicating efficient energy transfer within the material’s structure. A strong blue emission could be detected around 450 nm, which is characteristic of the material’s luminescent properties. However, this emission exhibited thermal quenching as the temperature increased, a common phenomenon where the luminescence intensity diminishes due to thermal effects. To better understand the thermal quenching behavior, variations in luminescence intensity and decay time were analyzed using a straightforward thermal quenching model. This comprehensive study of Ba₃WO₅Cl₂ luminescent properties not only deepens the understanding of its photophysical behavior but also contributes to the development of novel materials with tailored optical properties for specific technological applications.