In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters on the orientation, size, and morphology of the LIPSS are systematically investigated. The results reveal that, under identical laser irradiation conditions, the area of LIPSS on both N-SiC and HP-SiC increases linearly with the number of pulses, with N-SiC exhibiting a higher growth coefficient. Furthermore, analysis of differences in photothermal weak absorption and electric field modulation during the LIPSS fabrication process indicates that distinct SiC crystals yield varied LIPSS formation outcomes. This work not only elucidates the underlying physical mechanisms governing LIPSS formation on different silicon carbide crystal surfaces but also provides valuable guidance for precisely controlling the size and orientation of LIPSS regions on various 4H-SiC substrates.

Silicon carbide (SiC) single crystals are extensively utilized in various fields due to their exceptional properties, such as a wide bandgap and a high breakdown threshold. Nevertheless, the intrinsic high hardness of SiC creates significant challenges for contact machining. This study investigates the surface damage characteristics and underlying mechanisms involved in processing both high-purity silicon carbide (HP-SiC) and nitrogen-doped silicon carbide (N-SiC) crystals using fundamental-frequency nanosecond pulsed lasers. This study establishes a laser-induced damage threshold (LIDT) testing platform and employs the internationally standardized 1-ON-1 test method to evaluate the damage characteristics of HP-SiC and N-SiC crystals under single-pulse laser irradiation. Experimental results indicate that N-SiC crystals exhibit superior absorption characteristics and a lower LIDT compared with HP-SiC crystals. Subsequently, a defect analysis model was established to conduct a theoretical examination of defect information across various types of SiC. Under fundamental-frequency nanosecond pulsed laser irradiation, N-SiC crystals demonstrate a lower average damage threshold and a broader defect damage threshold distribution than their HP-SiC counterparts. By integrating multi-dimensional analytical methods—including photothermal weak absorption mechanisms and damage morphology analysis—the underlying damage mechanisms of the distinct SiC forms were comprehensively elucidated. Moreover, although N-SiC crystals show weaker photothermal absorption properties, they exhibit more pronounced absorption and damage response processes. These factors collectively account for the different laser damage resistances observed in the two types of silicon carbide crystals, implying that distinct processing methodologies should be employed for nanosecond pulsed laser treatment of different SiC crystals. This paper elucidates the damage characteristics of various SiC materials induced by near-infrared nanosecond pulsed lasers and explores their underlying physical mechanisms. Additionally, it provides reliable data and a comprehensive mechanistic explanation for the efficient removal of these materials in practical applications.

Laser-induced exit surface damage of fused silica is a key bottleneck for its application in high-power laser devices. As low-temporal coherence light (LTCL) has garnered increasing attention for high-power laser-driven inertial confinement fusion, understanding LTCL-induced exit surface damage of fused silica becomes crucial for improving the output power capability of LTCL devices. In this study, we characterized damage on the exit surface of fused silica under LTCL irradiation and investigated the physical mechanism of temporal coherence affecting the laser-induced damage threshold (LIDT). The relationship between defect information and temporal coherence was explored using a defect analysis model, and the defect damage process and response to each incident lasers were captured using time-resolved methods and artificially fabricated defects. We elucidate the physical mechanism behind the lower LIDT under LTCL irradiation compared to single longitudinal mode (SLM) pulse lasers. This study not only provides the boundary condition for safe fused silica operation in high-power LTCL devices but also offers deeper insight into the physical properties of LTCL.

Passive positioning systems with a small aperture array exhibit poor accuracy of target estimation under strong interference in near-field environments. To improve this accuracy, we propose a novel cross localization algorithm for direction-finding using the orientation angle. Improved geometric and numerical target-positioning models are constructed after analyzing the mechanism of the conventional positioning algorithm. The target prediction equation is then derived using the constructed models, and the equation for nonlinear estimation is linearized using the Taylor series. An unbiased estimation of the target is obtained by optimizing the control of the iteration process, thus achieving an accurate positioning of the target. The performance of the proposed algorithm was evaluated in terms of its effectiveness and positioning accuracy under varying signal-to-noise conditions and orientation angle-measurement errors. Simulation results show that the proposed algorithm is capable of positioning the target effectively, and offers better positioning accuracy than traditional algorithms under the conditions of large orientation angle measurement errors or high-level background noise.