Topological photonics has emerged as a novel approach to engineering the flow of light and provides unprecedented means for developing diverse photonic elements, including robust optical waveguides immune to structural imperfections. However, the development of nanoscale standing-wave cavities in topological photonics is rather slow, despite its importance when building densely integrated photonic integrated circuits. In this Letter, we report a photonic crystal nanocavity based on a topological corner state, supported at a 90-deg-angled rim of a two-dimensional photonic crystal. A combination of the bulk-edge and edge-corner correspondences guarantees the presence of the higher-order topological state in a hierarchical manner. We experimentally observe a corner mode that is tightly localized in space while supporting a high $Q$ factor over 2,000, verifying its promise as a nanocavity. These results cast new light on the way to introduce nanocavities in topological photonics platforms.

Topological photonics emerged as a novel route to engineer the flow of light. Topologically protected photonic edge modes, which are supported at the perimeters of topologically nontrivial insulating bulk structures, are of particular interest as they may enable low‐loss optical waveguides immune to structural disorder. Very recently, there has been a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolutionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of remarkable realizations are topological lasers with unidirectional light output under time‐reversal symmetry breaking and topologically protected polariton and micro/nanocavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non‐Hermitian and parity‐time symmetric quantum physics and are, in general, difficult to access using fermionic condensed matter systems. Here, we review the cutting‐edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are determined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent research on topological photonic systems in which gain and loss, themselves, essentially influence topological properties of the bulk systems. We believe that active topological photonics provides powerful means to advance micro/nanophotonics systems for diverse applications and topological physics, itself, as well.

Topological edge states exist at the interfaces between two topologically distinct materials. The presence and number of such modes are deterministically predicted from the bulk band topologies, known as the bulk-edge correspondence. This principle is highly useful for predictably controlling optical modes in resonators made of photonic crystals (PhCs), leading to the recent demonstrations of microscale topological lasers. Meanwhile, zero-dimensional topological trapped states in the nanoscale remained unexplored, despite its importance for enhancing light–matter interactions and for wide applications including single-mode nanolasers. Here, we report a topological PhC nanocavity with a near-diffraction-limited mode volume and its application to single-mode lasing. The topological origin of the nanocavity, formed at the interface between two topologically distinct PhCs, guarantees the existence of only one mode within its photonic bandgap. The observed lasing accompanies a high spontaneous emission coupling factor stemming from the nanoscale confinement. These results encompass a way to greatly downscale topological photonics.

We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results.