In order to study the anisotropy of fracture toughness and fracture mechanism of single-crystal sapphire, the three-point bending tests and the single-edge V-notch beam (SEVNB) were used to test the fracture toughness of A-plane, C-plane, and M-plane sapphire, which are widely used in the semiconductor, aerospace, and other high-tech fields. Fracture morphology was investigated by a scanning electron microscope and three-dimensional video microscopy. The fracture toughness and fracture morphology of different crystal planes of sapphire showed obvious anisotropy and were related to the loading surfaces. C-plane sapphire showed the maximal fracture toughness of 4.24 MPa·m^1/2, and fracture toughness decreases in the order of C-plane, M-plane, and A-plane. The surface roughness is related to the dissipation of fracture energy. The surface roughness of the fracture surface is in the same order as C-plane > M-plane > A-plane. The fracture behavior and morphology of experiments were consistent with the theoretical analysis. C-plane sapphire cleavages along the R-plane with an angle of 57.6 degrees and the rhombohedral twin were activated. M-plane and A-plane sapphire cleavages along their cross-section.