We report on a functional experimental design for Bessel beam generation capable of handling high-energy ultrashort pulses (up to 1.2 mJ per pulse of 50 fs duration). This allows us to deliver intensities exceeding the breakdown threshold for air or any dielectric along controlled micro-filaments with lengths exceeding 4 mm. It represents an unprecedented upscaling in comparison to recent femtosecond Bessel beam micromachining experiments. We produce void microchannels through glass substrates to demonstrate that aspect ratios exceeding $1200:1$ can be achieved by using single high-intensity pulses. This demonstration must lead to new methodologies for deep-drilling and high-speed cutting applications.

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10¹¹W cm⁻² which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams.

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 10¹²W/cm². The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅10¹⁹${\text{cm}}^{-3}$ , which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.

Carrier kinetics in the density range of $N={10}^{17}-{10}^{20}\hspace{0.17em}{\text{cm}}^{-3}$ is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-μm femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient $D_{\mathrm{a}}$ of $2.5\hspace{0.17em}{\text{cm}}^{2\hspace{0.17em}}{\mathrm{s}}^{-1}$ and an effective carrier lifetime ${\tau }_{\text{eff}}$ of $2.5\hspace{0.17em}\text{ns}$ at room temperature. A discussion on our findings at these high-injection levels is presented.