Anatoly Dvurechenskii completed his Doctor of Science in physics at the Rzhanov Institute of Semiconductor Physics (1988) of the Russian Academy of Science. From 2002 to 2018, he was the vice director of this institute, and, currently, he is the Head of the Lab of Nonequilibrium Semiconductor’s Systems, a professor at the Novosibirsk State University, and a corresponding member of the Russian Academy of Science. His main research interests are atomic and electronic structures in irradiated materials, crystal nucleation, and growth at laser annealing. The current research in his laboratory involves quantum dot heterostructures grown with molecular beam epitaxy, electronic, optical, and spin phenomena for nanodevices. As a guest scientist, he worked at the New York State University in Albany (1979), at the Rossendorf Research Center in Dresden, Germany (1980–2006), and at Fudan University in Shanghai, China (2001, 2002, and 2006). He has published more than 400 peer-reviewed papers in reputed journals and has been serving as an expert board member of repute.