Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

A practical way to link separate nodes in quantum networks is to send photons over the standard telecom fibre network. This requires sub-Poissonian photon sources in the wavelength band around 1550 nm, with photon coherence times sufficient to enable the many interference-based technologies at the heart of quantum networks. Here, we show that droplet epitaxy InAs/InP quantum dots emitting in the telecom C-band can provide photons with coherence times exceeding 1 ns under low power non-resonant excitation, and demonstrate that these coherence times enable near-optimal interference with a C-band polarisation-encoded laser qubit, with visibilities only limited by the quantum dot multiphoton emission. Using entangled photons, we further show teleportation of such qubits in six different bases with average postselected fidelity reaching 88.3 ± 4.0%. Beyond direct applications in long-distance quantum communication, the high degree of coherence in these quantum dots is promising for future spin-based telecom quantum network applications.

We measure the hyperfine interaction of the valence band hole with nuclear spins in single InP/GaInP semiconductor quantum dots. Detection of photoluminescence (PL) of both ``bright'' and ``dark'' excitons enables direct measurement of the Overhauser shift of states with the same electron but opposite hole spin projections. We find that the hole hyperfine constant is $\approx${}11% of that of the electron and has the opposite sign. By measuring the degree of circular polarization of the PL, an upper limit to the contribution of the heavy-light hole mixing to the measured value of the hole hyperfine constant is deduced. Our results imply that environment-independent hole spins are not realizable in III-V semiconductor, a result important for solid-state quantum information processing using hole spin qubits.

Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ‘‘droplet-epitaxy’’ of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at $\sim 900\mathrm{nm}$, and metal-organic vapor-phase epitaxy on InP emitting at $\sim 1550\mathrm{nm}$, with mean FSS $4\times$ smaller than for Stranski-Krastanow QDs.