Gallium oxide (Ga ₂ O ₃ ) is rapidly emerging as a material of choice for the development of solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap and extremely high Baliga figure of merit. The Ga ₂ O ₃ based devices show robustness against chemical, thermal and radiation environments. Unfortunately, the current Ga ₂ O ₃ technology is still not mature for commercial usage. Thus, extensive research on the growth of various polymorph of Ga ₂ O ₃ materials has been carried out. This article aims to provide an overview of the current understanding of epitaxial growth of different phases of Ga ₂ O ₃ by various growth techniques including pulsed laser deposition, molecular beam epitaxy, metal-organic chemical vapor deposition, sputtering, mist chemical vapor deposition and atomic layer deposition. The review also investigates the factors such as the growth temperature, pressure, carrier gas, III/V ratio, substrate as well as doping which would influence the synthesis and the stability of meta stable phases of Ga ₂ O ₃ . In addition, a thorough discussion of growth window is also provided using phase diagrams for aforementioned epitaxial deposition methods.

β-Ga₂O₃ has become an ultimate choice of emerging new-generation material for its wide range of compelling applications in power electronics. In this review, we have explored the available radiations in the atmosphere and the effects of radiation on the β-Ga₂O₃ material and devices. The focus in this review summarizes various studies covering different radiation such as swift heavy ions, protons, neutrons, electrons, Gamma, and X-rays to understand the radiation-induced effects on the structure and their reliable performance in harsh environments. In addition, we focused on the various pre-existing defects in β-Ga₂O₃ and the emergence of radiation-induced defects that provoke a severe concern, especially from the device performance point of view. This review presents the irradiation-induced effects on the devices such as high-power devices such as Schottky barrier diodes (SBDs), field-effect transistors (FETs), metal-oxide-semiconductor (MOS) devices, and photodetectors. Some key studies including the changes in carrier concentration with a removal rate, Schottky barrier height (SBH), ideality factor, defect dynamics dielectric damage, interface charge trapping, a thermally activated recovery mechanism for charge carriers at elevated temperature, and diffusion length of minority charge carriers. These reports show that β-Ga₂O₃-based devices could be deployable for space or high-radiation terrestrial applications. These results provide/suggest a better device design based on the radiation degradation studies in the state-of-the-art β-Ga₂O₃ devices.