We demonstrate a fully integrated photonic network-on-chip circuit with wavelength division multiplexing transceivers on silicon. The total transmission capacity is up to $8\times 8\times 40\mathrm{Gbps}$ for intra- and inter-chip interconnections.

In this paper we investigate reducing threshold and improving the efficiency and speed of distributed feedback hybrid silicon lasers. A low threshold current of 8.8 mA was achieved for a 200 μm cavity at 20 °C. A 3 dB bandwidth of 9.5 GHz as well as 12.5 Gb/s direct modulation of DFB laser diode was achieved on the hybrid silicon platform for the first time.

A linear modulator is indispensable for radio frequency photonics or analog photonic link applications where high dynamic range is required. There is also great interest to integrate the modulator with other photonic components, to create a photonic integrated circuit for these applications, with particular focus on silicon photonics integration in order to take advantage of complementary metal–oxide–semiconductor compatible foundries for high-volume, low-cost devices. However, all silicon modulators, including the highest performing Mach–Zehnder interferometer (MZI) type, have poor linearity, partially due to the inherent nonlinearity of the MZI transfer characteristic, but mostly due to the nonlinearity of silicon’s electro-optic phase shift response. In this work, we demonstrate ultralinear ring-assisted MZI (RAMZI) modulators, incorporating heterogeneously integrated III–V multiple quantum wells on silicon phase modulation sections to eliminate the nonlinear silicon phase modulation response. The heterogeneously integrated III–V/Si RAMZI modulators achieve record-high spurious free dynamic range (SFDR) for silicon-based modulators, as high as $117.5\mathrm{dB}·{\mathrm{Hz}}^{2/3}$ at 10 GHz for a weakly coupled ring design, and $117\mathrm{dB}·{\mathrm{Hz}}^{2/3}$ for a strongly coupled ring design with higher output power. This is a higher SFDR than typically obtained with commercial lithium niobate modulators. This approach advances integrated modulator designs on silicon for applications in compact and high-performance analog optical systems.

Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning.

In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz^2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.

We demonstrate a fully-integrated photonic Wavelength Division Multiplexing (WDM) transceiver circuit with heterogeneous integration on silicon, and on-chip interconnection with total transmission capacity up to 8×8×40 Gbps.