In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E_H ~ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ~ t^0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ~ h⁻¹ as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving force, which is based on the crystallization and redistribution of matter around the crystalline nuclei. The third regime (coalescence) corresponds to the merging of the dewetted fronts and of the islands positioned along the edges of the holes. The dynamics of this regime is much slower since it requires overcoming an additional nucleation barrier, while the surface energy reduction is quite low (low decrease of the covered surface area).

Design of monodisperse ultra-small nanocrystals (NCs) into large scale patterns with ad hoc features is demonstrated. The process makes use of solid state dewetting of a thin film templated through alloy liquid metal ion source focused ion beam (LMIS-FIB) nanopatterning. The solid state dewetting initiated at the edges of the patterns controllably creates the ordering of NCs with ad hoc placement and periodicity. The NC size is tuned by varying the nominal thickness of the film while their position results from the association of film retraction from the edges of the lay out and Rayleigh-like instability. The use of ultra-high resolution LMIS-FIB enables to produce monocrystalline NCs with size, periodicity, and placement tunable as well. It provides routes for the free design of nanostructures for generic applications in nanoelectronics.

Strain engineering is seen as a cost-effective way to improve the properties of electronic devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld growth instability and nucleation of dislocations. Two strain engineering processes have been developed, fabrication of stretchable nanomembranes by deposition of SiGe on a sacrificial compliant substrate and use of lateral stressors to strain SiGe on Silicon On Insulator. Here, we investigate the influence of substrate softness and pre-strain on growth instability and nucleation of dislocations. We show that while a soft pseudo-substrate could significantly enhance the growth rate of the instability in specific conditions, no effet is seen for SiGe heteroepitaxy, because of the normalized thickness of the layers. Such results were obtained for substrates up to 10 times softer than bulk silicon. The theoretical predictions are supported by experimental results obtained first on moderately soft Silicon On Insulator and second on highly soft porous silicon. On the contrary, the use of a tensily pre-strained substrate is far more efficient to inhibit both the development of the instability and the nucleation of misfit dislocations. Such inhibitions are nicely observed during the heteroepitaxy of SiGe on pre-strained porous silicon.

We develop self-organisation processes for the fabrication of 2D arrays of Si and Ge quantum dots. The processes make use of the dewetting phenomenon which involves the transformation of a 2D thin film into an array of isolated 3D islands through a morphological instability. We show that self-organization of monodisperse ultra-small nanocrystals (NCs) into large scale patterns with ad hoc features can be created via heterogeneous dewetting. The process involves dewetting of thin films nanopatterned by electron beam lithography (EBL) or liquid metal alloy source focused ion beam (LMAIS-FIB). Heterogeneous dewetting is initiated at the edges of the patterns. It provokes the retraction of the thin film following the kinetics of surface diffusion and ends by the formation of faceted monocrystalline NCs regularly positioned. Their geometrical features and lateral arrangements can be tuned by changing the pitch, size, and shape of the patterns. The process developed in this study is adapted to the fabrication of NCs based floating gate memories.

We investigate the morphological evolution of SiGe quantum dots deposited on Si(100) during long-time annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for elasticity, wetting, and anisotropy is shown to reproduce well the experimental findings with appropriate wetting parameters. In this nucleationless regime, a mean-field kinetic analysis explains the existence of nearly stationary states by the vanishing of the coarsening driving force. The island size distribution follows in both experiments and theory the scaling law associated with a single characteristic length scale.