The possibility of reducing the operating temperature of H₂ gas sensor based on ZnO-In₂O₃ down to room temperature under green illumination is shown. It is found that sensitivity of ZnO-In₂O₃ composite to H₂ nonmonotonically depends on the oxides’ content. The optimal ratio between the components is chosen. The new mechanism of nanocrystalline ZnO-In₂O₃ sensor sensitivity to H₂ under illumination by green light is proposed. The mechanism considers the illumination turns the composite into nonequilibrium state and the photoconductivity change in the H₂ atmosphere is linked with alteration of nonequilibrium charge carriers recombination rate.

The dynamics and anisotropy of the formation processes of near-surface structures in paratellurite (α-TeO₂) single crystals due to the migration of charge carriers induced by an external electric field are studied by x-ray diffraction and electrophysical methods. Significant yet reversible variations in the parameters of the diffraction rocking curves are observed. A diffraction peak broadening occurs for both polarities with a simultaneous shift of its maximum only occurring on the surface with a positive electric potential. For the [100] direction, a much higher velocity of saturation and relaxation processes was registered compared to the [110] direction. Moreover, a significant increase in the integral intensity of the 200 diffraction peak was observed. The electric field application along the fourth-order axis [001] does not lead to visible changes in the diffraction peak parameters. The dynamics and amplitude of the diffraction peak variation reflect the structural changes in the thin near-surface region of the crystal volume. This corresponds to the measured kinetics and value of the electric conductivity and the formation of the electrical double layer close to the insulator–metal interface, which is attributed to the oxide ion migration process from the crystal volume to its surfaces. The thickness of the structure formed close to the surface is estimated by mathematical calculations (the Debye screening length) and by x-ray diffraction (a layer with mechanical deformations) obtained at different diffraction orders. The experimental data are compared with the results of the x-ray diffraction peak simulations considering the crystal lattice strain with the depth attenuation.

This paper investigates the effect of alpha-particle irradiation on the memristive properties of titanium oxide-based structures. Multilayer TiOx/Ti structures were fabricated by magnetron sputtering and subjected to alpha-particle irradiation with a fluence of 2 × 1012 ions/cm2. Defect formation was modeled using the Monte Carlo method. The memristive characteristics of the structures were studied before and after bombardment. Ion bombardment was found to increase the number of stable resistive states by nearly three times, extend the number of switching cycles by 1.5 times, and significantly enhance the ROFF/RON ratio. This optimization of memristive parameters is attributed to the formation of locally created defects.