Vacuum ultraviolet (VUV) light plays an essential role across science and technology, from molecular spectroscopy to nanolithography and biomedical procedures. Realizing nanoscale devices for VUV light generation and control is critical for next-generation VUV sources and systems, but the scarcity of low-loss VUV materials creates a substantial challenge. We demonstrate a metalens that both generates—by second-harmonic generation—and simultaneously focuses the generated VUV light. The metalens consists of 150-nm-thick zinc oxide (ZnO) nanoresonators that convert 394 nm (~3.15 eV) light into focused 197-nm (~6.29 eV) radiation, producing a spot 1.7 μm in diameter with a 21-fold power density enhancement as compared to the wavefront at the metalens surface. The reported metalens is ultracompact and phase-matching free, allowing substantial streamlining of VUV system design and facilitating more advanced applications. This work provides a useful platform for developing low-loss VUV components and increasing the accessibility of the VUV regime.

Manipulation and precise delivery of optical energies in the regions of interest within specimens require different strategies. Hence, proper control of input beam parameters is a prerequisite. One of the prominent methods is metasurface optics, capable of crafting properties of light at nanoscales. Here, the generation of an abrupt autofocusing (AAF) beam by a nanophotonic metasurface for biomedical applications is demonstrated. Fluorescence guided laser microprofiling of mouse cardiac samples is experimentally investigated, using the AAF beam to deliver optical energy selectively to specific locations. In addition, photocoagulation of ex vivo swine skin tissue is performed and observed through optical coherence tomography. The results show great potentials for integrating metasurface optics to realize miniature laser surgery instruments for wide applications in biomedicine.

Metalens is one of the most promising applications for the development of metasurfaces. A wide variety of materials have been applied to metalenses working at certain spectral bands in order to meet the requirements of high efficiency and low-cost fabrication. Among these materials, wide-bandgap gallium nitride (GaN) is one of the most promising materials considering its advantages especially in semiconductor manufacturing. In this work, GaN has been utilized to fabricate the high-performance metalenses operating at visible wavelengths of 405, 532, and 633 nm with efficiencies up to 79%, 84%, and 89%, respectively. The homemade 1951 United State Air Force (UASF) resolution test chart has also been fabricated in order to provide resolvable lines with widths as small as 870 nm. As shown in the experimental results for imaging, the metalens designed at 405 nm can provide extremely high resolution to clearly resolve the smallest lines with the nano-sized widths in the homemade resolution test chart. These extraordinary experimental results come from our successful development in design and fabrication for the metalenses composed of high-aspect-ratio GaN nanoposts with nearly vertical sidewalls.

Perfect vortex beams (PVBs) take advantage of conventional vortex beams regarding their property of constant diameter of the annular intensity distribution on different topological charges (TCs), facilitating spatially coupling multiple beams with different TCs simultaneously. However, there are demands for PVBs with larger TCs that can be integrated with CMOS-fabrication processes in applications since conditional PVBs are composed of bulky optical components. In this work, we demonstrate metasurface-based PVBs (MPVBs) with TCs as high as −32 and 16 in the visible, manifesting annular intensity distributions capable of broadband operation. The optical eraser concept by integrating MPVBs has been conducted, and the flower-like interference performs a helicity switch to facilitate the uniformization of ring-shaped intensity profiles for the MPVBs with different TCs. The optical eraser experiments demonstrate the potential of MPVBs in advancing both quantum optics and optical device engineering and pave the way for probing quantum behaviors in optics.

The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.