In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.

We report successful simulation of current-injection photonic crystal laser showing the spatial-temporal evolution of the electromagnetic field as well as carrier distribution using our dynamical semiconductor medium (DSM) FDTD model, showing its capability in dealing with complex electromagnetic structures and semiconductor carrier dynamics.

A novel organic Mach Zehnder EO modulator using TCO as electrodes has been demonstrated. The simulation results show such structure is suitable for high frequency operation by engineering TCO material conductivity and loss.