Zinc telluride thin films with different thicknesses were grown onto glass substrates by the rf magnetron sputtering technique, using time as a variable growth parameter. All other deposition process parameters were kept constant. The deposited thin films with thickness from 75 to 460 nm were characterized using X-ray diffraction, electron microscopy, atomic force microscopy, ellipsometry, and UV-Vis spectroscopy, to evaluate their structures, surface morphology, topology, and optical properties. It was found out that the deposition time increase leads to a larger growth rate. This determines significant changes on the ZnTe thin film structures and their surface morphology. Characteristic surface metrology parameter values varied, and the surface texture evolved with the thickness increase. Optical bandgap energy values slightly decreased as the thickness increased, while the mean grains radius remained almost constant at ~9 nm, and the surface to volume ratio of the films decreased by two orders of magnitude. This study is the first (to our knowledge) that thoroughly considered the correlation of film thickness with ZnTe structuring and surface morphology characteristic parameters. It adds value to the existing knowledge regarding ZnTe thin film fabrication, for various applications in electronic and optoelectronic devices, including photovoltaics.

In this study, we report the fabrication and multi-technique characterization of pure and rare-earth (RE)-doped ZnO thin films using nanostructured microclusters synthesized via electrospinning followed by calcination. Lanthanum (La), erbium (Er), and samarium (Sm) were each incorporated at five concentrations (0.1–5 at.%) into ZnO, and the resulting powders were drop-cast as thin films on glass substrates. This approach enables the transfer of pre-engineered nanoscale morphologies into the final thin-film architecture. The morphological analysis by scanning electron microscopy (SEM) revealed a predominance of spherical nanoparticles and nanorods, with distinct variations in size and aspect ratio depending on dopant type and concentration. X-ray diffraction (XRD) and Rietveld analysis confirmed the wurtzite ZnO structure with increasing evidence of secondary phase formation at high dopant levels (e.g., Er₂O₃, Sm₂O₃, and La(OH)₃). Raman spectroscopy showed peak shifts, broadening, and defect-related vibrational modes induced by RE incorporation, in agreement with the lattice strain and crystallinity variations observed in XRD. Elemental mapping (EDX) confirmed uniform dopant distribution. Optical transmittance exceeded 70% for all films, with Tauc analysis revealing slight bandgap narrowing (Eg = 2.93–2.97 eV) compared to pure ZnO. This study demonstrates that rare-earth doping via electrospun nanocluster precursors is a viable route to engineer ZnO thin films with tunable structural and optical properties. Despite current limitations in film-substrate adhesion, the method offers a promising pathway for future transparent optoelectronic, sensing, or UV detection applications, where further interface engineering could unlock their full potential.