Porous 2D materials with high conductivity and large surface area have been proposed for potential electromagnetic interference (EMI) shielding materials in future mobility and wearable applications to prevent signal noise, transmission inaccuracy, system malfunction, and health hazards. Here, we report on the synthesis of lightweight and flexible flash-induced porous graphene (FPG) with excellent EMI shielding performance. The broad spectrum of pulsed flashlight induces photo-chemical and photo-thermal reactions in polyimide films, forming 5 × 10 cm²-size porous graphene with a hollow pillar structure in a few milliseconds. The resulting material demonstrated low density (0.0354 g cm⁻³) and outstanding absolute EMI shielding effectiveness of 1.12 × 10⁵ dB cm² g⁻¹. The FPG was characterized via thorough material analyses, and its mechanical durability and flexibility were confirmed by a bending cycle test. Finally, the FPG was utilized in drone and wearable applications, showing effective EMI shielding performance for internal/external EMI in a drone radar system and reducing the specific absorption rate in the human body.

In this paper, we investigate the structural, microstructural, dielectric, and energy storage properties of Nd and Mn co-doped Ba_0.7Sr_0.3TiO₃ [(Ba_0.7Sr_0.3)_1−xNd_xTi_1−yMn_yO₃ (BSNTM) ceramics (x = 0, 0.005, and y = 0, 0.0025, 0.005, and 0.01)] via a defect dipole engineering method. The complex defect dipoles ${(Mn}_{Ti}^{”}-V_O^{\bullet \bullet }{)}^{\bullet }$ and ${(Mn}_{Ti}^{”}-V_O^{\bullet \bullet })$ between acceptor ions and oxygen vacancies capture electrons, enhancing the breakdown electric field and energy storage performances. XRD, Raman, spectroscopy, XPS, and microscopic investigations of BSNTM ceramics revealed the formation of a tetragonal phase, oxygen vacancies, and a reduction in grain size with Mn dopant. The BSNTM ceramics with x = 0.005 and y = 0 exhibit a relative dielectric constant of 2058 and a loss tangent of 0.026 at 1 kHz. These values gradually decreased to 1876 and 0.019 for x = 0.005 and y = 0.01 due to the Mn²⁺ ions at the Ti⁴⁺- site, which facilitates the formation of oxygen vacancies, and prevents a decrease in Ti⁴⁺. In addition, the defect dipoles act as a driving force for depolarization to tailor the domain formation energy and domain wall energy, which provides a high difference between the maximum polarization of P_max and remnant polarization of P_r (ΔP = 10.39 µC/cm²). Moreover, the complex defect dipoles with optimum oxygen vacancies in BSNTM ceramics can provide not only a high ΔP but also reduce grain size, which together improve the breakdown strength from 60.4 to 110.6 kV/cm, giving rise to a high energy storage density of 0.41 J/cm³ and high efficiency of 84.6% for x = 0.005 and y = 0.01. These findings demonstrate that defect dipole engineering is an effective method to enhance the energy storage performance of dielectrics for capacitor applications.

Recently, electronics research has made major advances toward a new platform technology facilitating form factor‐free devices. 3D printing techniques have attracted significant attention in the context of fabricating arbitrarily shaped circuits. Herein, a 3D‐printable metallic ink comprising multidimensional eutectic gallium indium (EGaIn)/Ag hierarchical particles is proposed to fabricate arbitrarily designable solid/liquid biphasic conductors that can be inherently self‐healed/chip bonded and do not suffer from liquid flood out due to their liquid and solid nature, respectively. The EGaIn/Ag hierarchical particles are designed to have plasmonic optical absorption at the visible green–red wavelength regime, which is elucidated by an optical simulation study, and also enable the direct transfer of thermal energy, generated in the vicinity of the Ag nanoparticles, to the surface of the EGaIn particles. The 3D surface conformal green laser irradiation process activates the evolution of the biphasic conductive layer from the as‐printed insulating particulate one. The chemical/physical evolution is elucidated along with a photothermal simulation study for clarifying the suppression of undesirable side reactions. It is demonstrated that the biphasic conductors formed by successive 3D printing and the surface conformal green laser irradiation process exhibit electrical properties that have thus far been unexplored in solid metallic conductors.

In this paper, we investigate the structural, microstructural, dielectric, and energy storage properties of Nd and Mn co-doped Ba0.7Sr0.3TiO3 [(Ba0.7Sr0.3)1-xNdxTi1-yMnyO3 (BSNTM) ceramics (x = 0, 0.005, and y = 0, 0.0025, 0.005, and 0.01)] via a defect dipole engineering method. The complex defect dipoles (MnTi"-VO∙∙)∙ and (MnTi"-VO∙∙) between acceptor ions and oxygen vacancies capture electrons, enhancing the breakdown electric field and energy storage performances. XRD, Raman spectroscopy, and microscopic investigations of BSNTM ceramics revealed the formation of a tetragonal phase, increased oxygen vacancies, and reduced grain size with Mn dopant, respectively. The BSNTM ceramics with x=0.005 and y=0 exhibit a high dielectric constant of 2058 and a dielectric loss of 0.026 at 1 kHz. These values gradually decreased to 1876 and 0.019 for x=0.005 and y=0.01 due to the Mn2+ ions at Ti4+-site, which facilitates the formation of oxygen vacancies, and prevents the decrease of Ti4+. In addition, the defect dipoles act as a driving force for depolarization to tailor the domain formation energy and domain wall energy, which provides a high difference between the maximum polarization of Pmax and remnant polarization of Pr (ΔP=10.39 µC/cm2). Moreover, the complex defect dipoles with optimum oxygen vacancies in BSNTM ceramics can provide not only a high ΔP but also reduce grain size, which together improve the breakdown strength from 60.4 to 110.6 kV/cm, giving rise to a high energy storage density of 0.41 J/cm3 and high efficiency of 84.6% for x=0.005 and y=0.01. These findings demonstrate that defect dipoles engineering is an effective method to enhance the energy storage performance of dielectrics for capacitor applications.