We present the thermoelectric (TE) properties of LaCoO compound in the temperature range 300–600 K. The experimental value of Seebeck coefficient ( ) at 300 K is found to be V/K. The value of decreases continuously with increase in temperature and reaches to V/K at K. The electronic and TE properties of the compound have also been investigated by combining the ab initio electronic structures and Boltzmann transport calculations. LSDA plus Hubbard U ( eV) calculation on low spin configuration of the compound gives an energy gap of eV, which is close to the experimentally reported energy gap. The effective mass of holes ( ) at point is nearly two times larger than the value of effective mass of electrons ( ) at FB point along the L and T directions, whereas the at FB point along the direction is nearly eight times larger than the value of at point along the FB direction. The large effective mass at FB point along the direction suggests that the TE property of this compound is mainly decided by the effective mass of the charge carriers in this direction. The calculated temperature dependent values of are in fairly good agreement with experimental data in the temperature range 300–360 K, and above this temperature slight deviation is observed. The value of power factor (PF) for n-type is times larger the value of p-type doped compound at 1100 K. The value of figure-of-merit (ZT) for n-type doped compound is obtained 0.35 in the temperature range 600–1100 K, which suggests that with appropriate n-type doping this compound can be used as a good TE material in the high temperature region.

In the present work, we report the experimental thermopower ( α ) data for ZnV ₂ O ₄ in the high temperature range 300–600 K. The values of α are found to be ∼184 and ∼126 μ V K ⁻¹ at ∼300 and ∼600 K, respectively. The temperature dependent behavior of α is almost linear in the measured temperature range. In order to understand the large and positive α values observed in this compound, we have also investigated the electronic and thermoelectric properties by combining the ab initio electronic structure calculations with Boltzmann transport theory. Within the local spin density approximation plus Hubbard U, the anti-ferromagnetic ground state calculation gives an energy gap ∼0.33 eV for U = 3.7 eV, which is in accordance with the experimental results. The effective mass for holes in the valence band is found nearly four times that of electrons in the conduction band. The large effective mass of holes are mainly responsible for the observed positive and large α value in this compound. There is reasonably good matching between calculated and experimental α value in the temperature range 300–410 K. The power factor calculation shows that thermoelectric properties in the high temperature region can be enhanced by tuning the sample synthesis conditions and suitable doping. The estimated value of figure-of-merit , ZT , for p-type doped ZnV ₂ O ₄ is ∼0.3 in the temperature range 900–1400 K. It suggests that by an appropriate amount of p-type doping, this compound can be a good thermoelectric material in the high temperature region.