Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character.