Black phosphorus (BP), a novel two-dimensional (2D) layered semiconductor material, has attracted tremendous attention since 2014 due to its prominent carrier mobility, thickness-dependent direct bandgap and in-plane anisotropic physical properties. BP has been considered as a promising material for many applications, such as in transistors, photonics, optoelectronics, sensors, batteries and catalysis. However, the development of BP was hampered by its instability under ambient conditions, as well as by the lack of methods to synthesize large-area and high quality 2D nanofilms. Recently, some BP-analogue materials such as binary phosphides (MP_x), transition metal phosphorus trichalcogenides (MPX₃), and 2D group V (pnictogens) and 2D group VI materials have attracted increasing interest for their unique and stable structures, and excellent physical and chemical properties. This article, which focuses on BP and BP-analogue materials, will present their crystal structure, properties, synthesis methods and applications. Also the similarity and difference between BP and BP-analogue materials will be discussed, and the presentation of the future opportunities and challenges of the materials are included at the end.

Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure and tunable direct bandgap.

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

MXenes are a class of two-dimensional nanomaterials with exceptional tailor-made properties, making them promising candidates for a wide variety of critical applications from energy systems, optics, electromagnetic interference shielding to those advanced sensors, and medical devices. Owing to its mechano-ceramic nature, MXenes have superior thermal, mechanical, and electrical properties. Recently, MXene-based materials are being extensively explored for solar cell applications wherein materials with superior sustainability, performance, and efficiency have been developed in demand to reduce the manufacturing cost of the present solar cell materials as well as enhance the productivity, efficiency, and performance of the MXene-based materials for solar energy harvesting. It is aimed in this review to study those MXenes employed in solar technologies, and in terms of the layout of the current paper, those 2D materials candidates used in solar cell applications are briefly reviewed and discussed, and then the fabrication methods are introduced. The key synthesis methods of MXenes, as well as the electrical, optical, and thermoelectric properties, are explained before those research efforts studying MXenes in solar cell materials are comprehensively discussed. It is believed that the use of MXene in solar technologies is in its infancy stage and many research efforts are yet to be performed on the current pitfalls to fill the existing voids.

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.