Silver nanowire (AgNW) networks have been intensively investigated in recent years. Thanks to their attractive physical properties in terms of optical transparency and electrical conductivity, as well as their mechanical performance, AgNW networks are promising transparent electrodes (TE) for several devices, such as solar cells, transparent heaters, touch screens or light-emitting devices. However, morphological instabilities, low adhesion to the substrate, surface roughness and ageing issues may limit their broader use and need to be tackled for a successful performance and long working lifetime. The aim of the present work is to highlight efficient strategies to optimize the physical properties of AgNW networks. In order to situate our work in relation to existing literature, we briefly reported recent studies which investigated physical properties of AgNW networks. First, we investigated the optimization of optical transparency and electrical conductivity by comparing two types of AgNWs with different morphologies, including PVP layer and AgNW dimensions. In addition, their response to thermal treatment was deeply investigated. Then, zinc oxide (ZnO) and tin oxide (SnO₂) protective films deposited by Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) were compared for one type of AgNW. We clearly demonstrated that coating AgNW networks with these thin oxide layers is an efficient approach to enhance the morphological stability of AgNWs when subjected to thermal stress. Finally, we discussed the main future challenges linked with AgNW networks optimization processes.

The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This oxide layer with a thickness of a few nanometers is typically highly transparent and can be engineered for applications in large‐area optoelectronics. While the incorporation of solvated elements into the interfacial oxide of post‐transition metal‐based liquid metals is demonstrated for n‐doping, achieving p‐doping in such ultrathin oxide layers remains a significant challenge. In this study, the use of dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), and copper (Cu) in gallium (Ga)‐based alloys is investigated to create a high‐entropy liquid metal system. This allows the exfoliation of a p‐doped ultrathin oxide layer, predominantly composed of gallium oxide (Ga₂O₃). The incorporation of these post‐transition metals in this high‐entropy system results in their atomic dispersion, with Cu exhibiting limited surface presence. The atomically dispersed Pt, Au, and Pd metals scavenge oxygen during exfoliation at moderate temperatures and release them during cooling down, promoting the emergence of trivalent metallic In in Ga oxide layer. This work presents a novel doping strategy at moderate temperatures to achieve p‐doped liquid‐metal‐derived ultrathin Ga₂O₃ layers, which maintain high transparency.

The thermal instability of silver nanowires (AgNWs) leads to a significant increase of the electrical resistance of AgNW networks. A better understanding of the relationship between the structural and electrical properties of AgNW networks is primordial for their efficient integration as transparent electrodes (TEs) for next-generation flexible optoelectronics. Herein, we investigate the in situ evolution of the main crystallographic parameters (i.e. integrated intensity, interplanar spacing and peak broadening) of two Ag-specific Bragg peaks, (111) and (200), during a thermal ramp up to 400 °C through in situ X-ray diffraction (XRD) measurements, coupled with in situ electrical resistance measurements on the same AgNW network. First, we assign the (111) and (200) peaks of χ-scans to each five crystallites within AgNWs using a rotation matrix model. Then, we show that the thermal transition of bare AgNW networks occurs within a temperature range of about 25 °C for the electrical properties, while the structural transition spans over 200 °C. The effect of a protective tin oxide coating (SnO₂) on AgNW networks is also investigated through this original in situ coupling approach. For SnO₂-coated AgNW networks, the key XRD signatures from AgNWs remain constant, since the SnO₂ coating prevents Ag atomic surface diffusion, and thus morphological instability (i.e. spheroidization). Moreover, the SnO₂ coating does not affect the strain of both (111) and (200) planes. The thermal expansion for bare and SnO₂-coated AgNW networks appears very similar to the thermal expansion of bulk Ag. Our findings provide insights into the underlying failure mechanisms of AgNW networks subjected to thermal stress, helping researchers to develop more robust and durable TEs based on metallic nanowire networks.

A novel composite material is introduced and its unique electrical conduction properties are investigated using the original concept of bridge percolation. The study provides key insights into its percolation and resistive scaling behaviors.