The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.

We observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current of a $1.7\mathrm{nm}$ gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into the apparent Debye length around a negatively charged oxide trap. We achieve excellent reproduction of the Debye data (40 down to $5\mathrm{nm}$ ). This leads to the quantified area spanned by the dominant conductive percolation paths in the underlying two-dimensional electron gas (2DEG). We find that most of the 2DEG in inversion is recovered in a largest threshold voltage sample $(\sim 0.35\mathrm{V})$ , while for the lowest threshold $(\sim 0.15\mathrm{V})$ , a certain conductive filament is likely to occur. The gate direct tunneling current further corroborates the percolation picture.

Although mechanical exfoliation allows the preparation of flakes of two-dimensional (2D) layered materials from their bulk counterparts in a cost-efficient and versatile manner, it has been difficult to correlate the surface morphology of the exfoliated flakes with their fundamental electrical characteristics. In this study, we used mechanical exfoliation to prepare 2D layered titanium trisulfide (TiS ₃ ) nanoribbons having thicknesses varying from a few to tens of nanometers. Interestingly, the bulk electrical conductivity of the exfoliated TiS ₃ nanoribbons was correlated to their surface roughness, rather than their thickness. Furthermore, at temperatures from 80 K to 280 K, the distinctive behavior of the electrical conductivity in the exfoliated nanoribbons was also significantly dependent on the surface roughness. Measurements of intrinsic field-effect electron mobilities unveiled that the dominant mobility scattering mechanism transitioned from phonon scattering to coulombic and/or surface roughness scattering upon increasing the surface roughness, thereby resulting in distinctive temperature-dependent electrical conductivity behavior. Accordingly, simple measurements of surface morphologies can provide information regarding the fundamental electrical properties of 2D exfoliated layered flakes, potentially leading to greater use of layered materials in semiconductor applications.

Single‐Molecule Detection An ex‐situ atomic force microscopy (AFM)–molecule chip technique allows the ex‐situ AFM analysis detection of antibody–antigen interactions at the single‐molecule level. Thi...

The rapid evolution of artificial intelligence (AI) computing demands innovative memory technologies that integrate high-speed processing with energy-efficient data storage.

Two-dimensional transition metal dichalcogenides (TMDs) are promising candidates for next-generation neuromorphic electronics owing to their tunable electronic structure and defect-mediated charge dynamics. Here, we demonstrate alloying engineering of Mo1–xWxS2 (0 ≤ x ≤ 1) via chemical vapor deposition to precisely tailor the lattice strain, defect density, and optoelectronic properties. Structural and spectroscopic analyses confirm the homogeneous distribution of Mo and W atoms within the alloy lattice, accompanied by strain fields that enhance trap-mediated charge processes. Optical measurements reveal composition-dependent bandgap tuning and exciton lifetimes, with near-equiatomic MoWS2 exhibiting the strongest non-radiative recombination pathways. Synaptic field-effect transistors based on these alloys display pronounced hysteresis windows of up to 22 V, high interface trap densities, and robust low-frequency noise characteristics, effectively linking alloy disorder to defect-driven memory functions. Remarkably, near-equiatomic MoWS2 synaptic devices emulate key biological features, including a paired-pulse facilitation index of up to 188%, dynamic learning–forgetting–relearning cycles, stable long-term potentiation/depression, and an 87.95% recognition accuracy in CNN simulation. These findings establish alloy-engineered Mo1–xWxS2 as a powerful platform for defect–strain coupling and neuromorphic functionality in two-dimensional materials.