The majority of acute post-traumatic subdural hematomas (ASDH) require urgent surgical evacuation. Spontaneous resolution of ASDH has been reported in some cases. We report here on a case of a patient with a large amount of ASDH that was rapidly reduced. A 61-yr-old man was found unconscious following a high speed motor vehicle accident. On initial examination, his Glasgow Coma Score scale was 4/15. His pupils were fully dilated and non-reactive to bright light. Brain computed tomography (CT) showed a massive right-sided ASDH. The decision was made to treat him conservatively because of his poor clinical condition. Another brain CT approximately 14 hr after the initial scan demonstrated a remarkable reduction of the previous ASDH and there was the new appearance of high density in the subdural space adjacent to the falx and the tentorium. Thirty days after his admission, brain CT revealed chronic SDH and the patient underwent surgery. The patient is currently able to obey simple commands. In conclusion, spontaneous rapid resolution/reduction of ASDH may occur in some patients. The mechanisms are most likely the result of dilution by cerebrospinal fluid and the redistribution of hematoma especially in patients with brain atrophy.

In this study, the effects of inductively coupled plasma (ICP) power added to the DC magnetron sputtering of indium gallium zinc oxide (IGZO) using Ar/O₂ on the plasma characteristics and IGZO thin film characteristics were investigated. The addition of ICP power decreased the magnetron voltage and increased the magnetron current due to the increased plasma density near the magnetron surface. The addition of ICP also increased the deposition rate but also increased the surface roughness of the deposited IGZO thin films. When the electrical characteristics of deposited IGZO thin films were measured, the increase of ICP power to 300 W not only increased the carrier concentration from 1.87 × 10¹⁹ to 2.59 × 10¹⁹ cm^–3 but also increased carrier mobility from 14 to 16.7 cm₂/Vs possibly due to the decreased defects (decreased defect scattering) in the film even with the increased impurity scattering caused by increased carrier concentration. The further increase of ICP power to 500 W slightly decreased the carrier mobility while slightly increasing the carrier concentration due to both the increased impurity scattering by the increased carrier concentration and the increased surface scattering caused by the increased surface roughness. The optical transmittance was not significantly varied with the ICP power and was higher than 80% at for the visible wavelength and the structure of IGZO deposited at room temperature remained amorphous even with the ICP power up to 500 W.

Kim JS, et al. J Cerebrovasc Endovasc Neurosurg. 2015 Sep;17(3):223-226. https://doi.org/10.7461/jcen.2015.17.3.223

Kim J, et al. Korean J Neurotrauma. 2019 Jul;15:e24. https://doi.org/10.13004/kjnt.2019.15.e24