Nanodiamonds with the 'diamond' 1332.5 cm⁻¹ Raman line as narrow as 1.8 cm⁻¹ have been produced by reactive ion etching in oxygen plasma of heteroepitaxial diamond particles grown by microwave plasma enhanced chemical vapour deposition (MWPECVD) on silicon. After the etching, a doublet is recorded in the zero-phonon line photoluminescence spectra of an ensemble of silicon-vacancy (SiV) centres at 10 K. Each line of the doublet is split into two lines corresponding to the optical transitions between the split excited and ground energy levels of the SiV centres. These Raman and photoluminescent features have been observed previously only in low-strain homoepitaxial diamond films and single-crystal diamond.

Isolated spherical diamond particles with embedded silicon-vacancy color centers are synthesized on a patterned surface of synthetic opal by chemical vapor deposition methods. The phase composition...

The structural, electrical, and optical properties of thin graphite-like films produced by magnetron- assisted sputtering onto crystalline silicon and quartz at substrate temperatures in the range...

The investigation of the hot filament chemical vapor deposition nanodiamonds with simultaneously embedded luminescent GeV⁻ and SiV⁻ color centers from solid sources showed that both the absolute and relative intensities of their zero-phonon lines (at 602 and 738 nm) depend on nanodiamond growth conditions (a methane concentration in the CH₄/H₂ gas mixture, growth temperature, and time). It is shown that a controlled choice of parameters of hot filament chemical vapor deposition synthesis makes it possible to select the optimal synthesis conditions for tailoring bicolor fluorescence nanodiamond labels for imaging biological systems.