This review systematically summarizes the latest research advances of AlN crystals grown by the PVT method and their applications.

This review systematically summarizes the latest research progress in 2D GaN and 2D AlN structures, their properties, fabrication methods and applications.

In this paper, an ultra-high sensitivity MAPbBr ₃ /NP GaN hybrid structure device was fabricated for the first time with a high current on/off ratio of about 5000 and fast response speeds of 0.21/0.44 s.

Exploring energy storage materials with ultralong cycle lifespan and high energy/power density in extremely high-temperature environments is crucial. In this work, a gallium nitride (GaN) crystal is applied in a high-temperature energy storage field for the first time, and the relevant reasons for the improved energy storage are proposed. A few-layered GaN crystal rich in N-vacancies is designed and fabricated via an efficient and facile strategy, which further increases its specific area and active sites. An ionic-liquid-based supercapacitor device is developed by combining the GaN and ionic liquids. This device exhibits high specific capacity (52.58 mF cm⁻² at 0.8 mA cm⁻²) and a wide voltage window (0–2.7 V). Even at a high temperature of 150 °C and a scan rate of up to 50 V s⁻¹, 86.2% capacity is retained at 8 mA cm⁻² over 10 000 cycles. Additionally, the energy storage mechanism of GaN with N vacancies is further investigated using density functional theory calculations. This study systematically demonstrates the application potential of GaN crystals in the field of high-temperature energy storage, and provides a strategy for the application of wide-bandgap semiconductors in a new field.

This paper describes the fabrication of a 2 inch free standing porous GaN crystal film and the application in the growth of relaxed crack-free thick GaN.

Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method.