The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm ₂ O ₃ ) polymer interlayers on the electrical characteristics in detail. The fabricated reference sample Au/n-Si, Au/PVC/n-Si, and Au/(PVC: Sm ₂ O ₃ )/n-Si were named as Metal-Semiconductor (MS), Metal-Polymer-Semiconductor (MPS1), and MPS2 structure, respectively. The procedure of providing Sm ₂ O ₃ is also described in detail. XRD, FE-SEM), EDX, and UV–vis spectroscopy, have been applied to study the mean crystalline structure, morphology, elemental characterization, and optical features of the provided Sm ₂ O ₃ . After structural analysis, the I-V features were performed in the wide range voltage (±3.5 V), and then, the basic electronic parameters of these structures were extracted from various techniques and compared with each other. Experimental results show that (PVC: Sm ₂ O ₃ ) leads to an increase of barrier-height (BH), rectifying-rate R R = I F / I R , shunt-resistance ( R _sh ), and decrease of ideality-factor (n), surface-states ( N _ss ). The RR of the MPS2 structure was found 117 times higher than the MS structure. The energy-dependent profile of N _ss was also obtained from the forward bias I–V data by considering voltage-dependent n and BH. The plots reverse-bias ln I R − V R 0.5 characteristics show that Schottky-emission (SE) type conduction mechanism is effective for MS structure, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.

In this paper, using the Optical Emission Spectroscopy technique, the physical properties of a fabricated pulsed DBD plasma jet are studied. Ar/N₂ gaseous mixture is taken as operational gas, and Ar contribution in Ar/N₂ mixture is varied from 75 to 95%. Through the optical emission spectra analysis of the pulsed DBD plasma jet, the rotational, vibrational and excitation temperatures and density of electrons in plasma medium of the pulsed plasma jet are obtained. It is seen that, at the wavelength of 750.38 nm, the radiation intensity from the Ar 4p → 4 s transition increases at the higher Ar contributions in Ar/N₂ mixture. It is found that, for 95% of Ar presence in the mixture, the emission intensities from argon and molecular nitrogen are higher, and the emission line intensities will increase nonlinearly. In addition, it is observed that the quenching of Ar^* by N₂ results in the higher intensities of N₂ excited molecules. Moreover, at the higher percentages of Ar in Ar/N₂ mixture, while all the plasma temperatures are increased, the plasma electron density is reduced.

In this paper, the influence of doping barium titanate in the polyvinyl pyrrolidine polymer sandwiched between the metal-semiconductor on the conduction mechanism and the electrical properties of the formed diode has been examined. The barium titanate nanostructure is prepared by microwave assisted method. The TGD/DTA, x-ray diffraction pattern (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Electron Dispersive x-ray (EDX) and UV-Vis spectroscopy analyses are performed in order to determine the calcination temperature, average crystalline size, surface morphology, purity specification, and optical properties of the prepared barium titanate nanostructure, respectively. The main electrical parameters such as the ideality factor (n), barrier height (BH), leakage current (I ₀ ), shunt (R _sh ) and series (R _s ) resistances of the Al/PVP: BaTiO ₃ /p-Si (MPS) and Al/p-Si (MS) structures are calculated by Thermionic Emission (TE), Norde, and Cheung methods by measuring the I–V characteristics of the both diodes at ±6 V and compared with each other. Moreover, the surface states density (N _ss ) as a function of energy at forward bias and the current conduction mechanisms at forward and revers bias are investigated. The rectifying ratio of MPS diode is enhanced by reducing the n, R _s , N _ss , I ₀ and by increasing shunt resistance (R _sh ), BH due to presence of interfacial layer. Therefore, PVP: BaTiO ₃ interlayer can be a suitable alternative replacement of intrinsic interlayer for utilization in the nanoscale electronic and optoelectronic devices and circuits.