Liang Zhai

Prof. Dr. Liang Zhai

University of Basel, Basel, Switzerland
orcid

Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 May 2022 in Nature Nanotechnology
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Journal Article
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LZLiang Zhai
Liang Zhai
GNGiang N. Nguyen
Giang N. Nguyen
Clemens SpinnlerClemens Spinnler
Clemens Spinnler
JRJulian Ritzmann
Julian Ritzmann
MLMatthias C. Löbl
Matthias C. Löbl
RWRichard J. Warburton
Richard J. Warburton

21 September 2020 in Nature Communications
Verified
Journal Article
Open access
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LZLiang Zhai
Liang Zhai
MLMatthias C. Löbl
Matthias C. Löbl
GNGiang N. Nguyen
Giang N. Nguyen
JRJulian Ritzmann
Julian Ritzmann
AJAlisa Javadi
Alisa Javadi
RWRichard J. Warburton
Richard J. Warburton
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons—bandwidth-matched to an atomic quantum-memory—and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n-i-p-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.

1 March 2018 in Nano Letters
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Journal Article
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HTHenri Thyrrestrup
Henri Thyrrestrup
GKGabija Kiršanskė
Gabija Kiršanskė
HJHanna Le Jeannic
Hanna Le Jeannic
TPTommaso Pregnolato
Tommaso Pregnolato
LZLiang Zhai
Liang Zhai
PLPeter Lodahl
Peter Lodahl

1 January 2022 in Photonics Insights
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Journal Article
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Xiaoyan ZhouXiaoyan Zhou
Xiaoyan Zhou
LZLiang Zhai
Liang Zhai
JLJin Liu
Jin Liu
Epitaxial quantum dots formed by III–V compound semiconductors are excellent sources of non-classical photons, creating single photons and entangled multi-photon states on demand. Their semiconductor nature allows for a straightforward combination with mature integrated photonic technologies, leading to novel functional devices at the single-photon level. Integrating a quantum dot into a carefully engineered photonic cavity enables control of the radiative decay rate using the Purcell effect and the realization of photon–photon nonlinear gates. In this review, we introduce the basis of epitaxial quantum dots and discuss their applications as non-classical light sources. We highlight two interfaces—one between flying photons and the quantum-dot dipole, and the other between the photons and the spin. We summarize the recent development of integrated photonics and reconfigurable devices that have been combined with quantum dots or are suitable for hybrid integration. Finally, we provide an outlook of employing quantum-dot platforms for practical applications in large-scale quantum computation and the quantum Internet.

22 November 2023 in Physical Review Letters
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Journal Article
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GNGiang N. Nguyen
Giang N. Nguyen
Clemens SpinnlerClemens Spinnler
Clemens Spinnler
MHMark R. Hogg
Mark R. Hogg
LZLiang Zhai
Liang Zhai
AJAlisa Javadi
Alisa Javadi
RWRichard J. Warburton
Richard J. Warburton
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from T2*=3.9  ns to 0.608  μs. The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically active GaAs quantum dots as fast, highly coherent spin-photon interfaces.

15 June 2020 in Nature Nanotechnology
Verified
Journal Article
Closed access
PDF file
MLMatthias C. Löbl
Matthias C. Löbl
Clemens SpinnlerClemens Spinnler
Clemens Spinnler
AJAlisa Javadi
Alisa Javadi
LZLiang Zhai
Liang Zhai
GNGiang N. Nguyen
Giang N. Nguyen
RWRichard J. Warburton
Richard J. Warburton