Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons—bandwidth-matched to an atomic quantum-memory—and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n-i-p-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from to . The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically active GaAs quantum dots as fast, highly coherent spin-photon interfaces.
A promising route towards the deterministic creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve this by coupling self-assembled InAs quantum dots to a small mode-volume phononic-crystal resonator with mechanical frequency Ωm/2π = 1.466 GHz and quality factor Qm = 2.1 × 103. Thanks to the high coupling rate of gep/2π = 2.9 MHz, and by exploiting a matching condition between the effective Rabi and mechanical frequencies, we observe the interaction between the two systems via correlations in the emitted photons. Our results represent a major step towards quantum control of the mechanical resonator via a single-photon emitter.
In a radiative Auger process, optical decay leaves other carriers in excited states, resulting in weak red-shifted satellite peaks in the emission spectrum. The appearance of radiative Auger in the emission directly leads to the question if the process can be inverted: simultaneous photon absorption and electronic demotion. However, excitation of the radiative Auger transition has not been shown, neither on atoms nor on solid-state quantum emitters. Here, we demonstrate the optical driving of the radiative Auger transition, linking few-body Coulomb interactions and quantum optics. We perform our experiments on a trion in a semiconductor quantum dot, where the radiative Auger and the fundamental transition form a Λ-system. On driving both transitions simultaneously, we observe a reduction of the fluorescence signal by up to 70%. Our results suggest the possibility of turning resonance fluorescence on and off using radiative Auger as well as THz spectroscopy with optics close to the visible regime.