Artificial neurons and synapses are critical units for processing intricate information in brain-inspired neuromorphic systems. Memristors are frequently engineered as artificial synapses due to their simple structures, nonlinear dynamics, and high-density integration. However, the development of artificial neurons on memristors has less progress. In this letter, we propose a rich dynamics-driven artificial neuron based on two-dimensional materials MXene. Partial essential neural features of neural processing, including leaky integration, automatic threshold-driven fire, and self-recovery, were successfully emulated in a unified manner. The space-charge-limited current (SCLC) model accompanied by electrochemical metallization effect was used to explain electrical characteristics. This work will provide a useful guideline for designing and manipulating memristor as artificial neurons for brain-inspired systems.

Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future.

Artificial synapses and neurons are two critical, fundamental bricks for constructing hardware neural networks. Owing to its high-density integration, outstanding nonlinearity, and modulated plasticity, memristors have attracted emerging attention on emulating biological synapses and neurons. However, fabricating a low-power and robust memristor-based artificial neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a single two-dimensional (2D) MXene(V₂C)-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, originating from the Ag diffusion-based filamentary mechanism. Moreover, our V₂C-based artificial neurons faithfully achieve multiple neural functions including leaky integration, threshold-driven fire, self-relaxation, and linear strength-modulated spike frequency characteristics. This work demonstrates that three-atom-type MXene (e.g., V₂C) memristors may provide an efficient method to construct the hardware neuromorphic computing systems.

MXene is a hot family of transition metal carbides or nitrides demonstrating promising potentials in the fields of batteries, supercapacitors, and memristive devices. One of MXenes, i.e., five-atoms-type MXene (Ti ₃ C ₂ ), has been reported to fabricate memristive devices and show resistive switching. However, MXene has another big group of three-atoms-type rather than five-atoms-type based on fundamental chemical structure. Besides, the group of three-atoms-type MXene is rarely investigated to fabricate memristive devices. Moreover, the effect of three-atoms-type Mxene (i.e., V ₂ C) on the performance of memristive devices and the physical mechanisms behind have not been explored. In this work, we constructed the lattice structure and compared the fundamental properties of V ₂ C with Ti ₃ C ₂ using the first-principles calculation. Moreover, the diffusion coefficient and the conductivity of Ag ⁺ in V ₂ C and Ti ₃ C ₂ have been checked by the density functional theory (DFT). It can be revealed that V ₂ C has a more stable atomic structure, a higher conductivity, and a superior diffusion coefficient of Ag ⁺ in V ₂ C. In addition, we fabricated memristive devices of the Ag/V ₂ C/W and Ag/Ti ₃ C ₂ /W based on the simulation results for comparison. Next, electrical characteristics of V ₂ C and Ti ₃ C ₂ of memristive devices were tested including the variation of device-to-device and cycle-to-cycle, the endurance, and the ratio of R_off / R_on . The experimental data indicate that the memristive devices with V ₂ C have achieved more stable resistive switching behaviors. The results of this work provide a useful guideline and methodology for exploring and determining various types of MXenes in advance of the experimental fabrication of memristive devices.

The development of vision bionic systems is indispensable for the perception, memory, and processing of optical signals, which promotes the exploration of efficient visual perception systems. In this work, a simple and novel two‐terminal optoelectronic memristor based on the CuAlAgCr/TiO₂/W (CTW) structure is prepared, where the CuAlAgCr high‐entropy alloys are employed as the top electrode for the first time. Before annealing, the CTW optoelectronic memristor exhibited fascinating performance, including uniformly distributed operating voltage, reliable data retention, and a higher switching ratio. Moreover, the optoelectronic memristor can be reversibly switched between volatile and nonvolatile memories by adjusting compliance currents. The CTW optoelectronic memristor annealed in air exhibits various artificial synaptic functions, such as short‐term memory, optical learning, and forgetting behavior under the illumination of the laser. The photo‐response current is increased from nano‐ampere to micro‐ampere level. Furthermore, a logic function unit based on CTW optoelectronic memristor is proposed, which realizes “AND” operation. Furthermore, first‐principles calculations of the CTW structure are performed to describe the influence of photocarriers on the barrier height at the CuAlAgCr‐TiO₂ interface, revealing the working mechanism of the CTW optoelectronic memristor. This work has greatly facilitated the development of optically operated artificial synaptic devices and vision bionic systems.