Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

Thin films of tin oxide were deposited by electron beam evaporation. The effectsof the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin filmswere investigated. The films were characterized using X-ray diffraction and X-rayphotoelectron spectroscopy All the films were found to be amorphous. The current-voltagecharacteristic of the sensor in air has shown that semiconductor-metal interface formsSchottky barrier. It was found that the CO-sensing properties depend on the sensor biasingvoltage and film thickness. For lower biasing voltages the sensitivity was much higher thanfor the higher voltages. It was found that the sensitivity of the films to CO increased withthe film thickness.