P-type Fe₃CoSb₁₂-based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and employing advanced pulsed laser deposition techniques to address the bonding challenge between the thin films and high-temperature flexible polyimide substrates. Through the optimization of fabrication processing and nominal doping concentration of Ce, the thin films show a power factor of >100 μW m⁻¹ K⁻² and a ZT close to 0.6 at 653 K. After >2000 bending cycle tests at a radius of 4 mm, only a 6 % change in resistivity can be observed. Additionally, the assembled p-type Fe₃CoSb₁₂-based flexible device exhibits a power density of 135.7 µW cm⁻² under a temperature difference of 100 K with the hot side at 623 K. This work fills a gap in the realization of flexible thermoelectric devices in the medium-to-high-temperature range and holds significant practical application value.

Realizing high thermoelectric performance in CoSb₃ skutterudite‐based thin films and their devices is historically challenging, especially due to the lack of high‐performing thin‐film‐based device working at medium‐to‐high temperatures. Here, a record‐high ZT of 1.1 is achieved at 683 K in an n‐type Ce_0.3Ni_1.5Co_2.5Sb₁₂ thin film, fabricated from a self‐designed target via advanced pulsed laser deposition. Both experimental and computational results confirm that the Ce‐filling and metal‐featured nanoinclusions such as CeSb contribute to high electrical conductivity, while the Ni‐doping and significantly strengthen the energy filtering effect that occurs at the dense interfaces between the Ce_0.3Ni_1.5Co_2.5Sb₁₂ matrix and the nanoinclusions which leads to a large Seebeck coefficient, giving rise to such a high ZT. In addition, a new‐type CoSb₃ thin‐film‐based device is successfully fabricated, which exhibits a high output power density of 8.25 mW cm⁻² at a temperature difference of 140 K and a cold‐side temperature of 573 K, indicating the potential for application to medium‐to‐high‐temperature power generation scenarios.

The in-plane mechanical anisotropy of magnesium alloy sheet, which significantly influences the design of the parts produced by Mg alloy sheets, is of great importance regarding its wide application. Though the stress–strain response and texture evolution have been intensively investigated, and the anisotropy of Mg alloy can be significantly substantiated by its R-value, which reveals the lateral response of a material other than the primary response. As a consequence, the conjunction of viscoplastic self-consistent model and twinning and detwinning scheme (VPSC–TDT) is employed to investigate the in-plane anisotropy of magnesium alloy AZ31B-O sheet. The loading cases include both tension and compression along different paths with respect to the processing direction of the sheet. It is revealed that the stress–strain relation, texture evolution, R-value, and involved deformation mechanisms are all loading path-dependent. The unique R-values of Mg alloys are interpreted with the aid of modeling behaviors of Mg single crystals. The results agree well with the corresponding experiments. It is found that the hexagonal close-packed (HCP) crystallographic structure, deformation twinning, and initial basal texture are responsible for the characteristic behavior of Mg alloys.