We report on the growth of N-polar ${\text{In}}_{\text{x}}{\text{Ga}}_{1-\text{x}}\text{N}$ by ${\text{N}}_2$ plasma-assisted molecular beam epitaxy. Ga-polar and N-polar InGaN films were grown at different growth temperatures and the composition was estimated by photoluminescence (PL) measurements. A growth model that incorporates the incoming and desorbing atomic fluxes is proposed to explain the compositional dependence of InGaN on the flux of incoming atomic species and growth temperature. The growth model is found to be in agreement with the experimental data. The peak PL intensity for N-face samples is found to exhibit a two order of magnitude increase for a $100°\text{C}$ increase in growth temperature. Besides, at 600 nm, the N-face sample shows more than 100 times higher PL intensity than Ga-face sample at comparable wavelengths indicating its superior optical quality. The understanding of growth kinetics of InGaN presented here will guide the growth of N-polar InGaN in a wide range of growth temperatures.

Supercapacitor (SC) devices holds an important position between traditional capacitors and ion batteries in terms of energy density and power density values. In particular, SC′s greater power density values than Li‐ion batteries make them useful for some specific applications, such as storing energy in hybrid cars while the car slows down. Increasing energy density values is one of the key challenges for the SC community. Transition metal dichalcogenides (TMDCs), are one of the new developing important material systems to have this potential, compared to their counterparts’ transition metal oxides and conductive polymers. This review is about giving insight into the electrochemical performances of two‐dimensional (2D) layered transition metal sulfides (TMS) such as MoS₂, WS₂, TaS₂, NbS₂, VS₂, TiS₂ and ZrS₂ materials. On the other hand, the methods mostly used in synthesizing these materials are presented.

We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N₂ plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In_0.29Ga_0.71N quantum wells were grown at a temperature of 600 °C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm². This work is the first demonstration of an N-polar LED with emission in the green wavelength range.