Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is a promising way to tune the properties of materials and the performance of corresponding nano-devices. As the memristor has been regarded as an excellent candidate for in-memory devices in next-generation computing system, the application of laser irradiation in developing excellent memristor based on 2D materials should be explored deeply. Here, tellurene (Te) flakes are exposed to a 532 nm laser in the air atmosphere to investigate the evolutions of the surface morphology and atom structures under different irradiation parameters. Laser is capable of thinning the flakes, inducing amorphous structures, oxides and defects, and forming nanostructures by controlling the irradiation power and time. Furthermore, the laser-induced oxides and defects promote the migration of metal ions in Te, resulting in the formation of the conductive filaments, which provides the switching behavers of volatile memristor, opening a route to the development of next-generation nano-devices.

Strain engineering is a promising and fascinating approach to tailoring the electrical and optical properties of 2D materials, which is of great importance for fabricating excellent nano-devices. Although previous theoretical works have proved that the monolayer tellurene has desirable mechanical properties with the capability of withstanding large deformation and the tunable band gap and mobility conductance induced by in-plane strain, the effects of in-plane and out-of-plane strains on the properties of few-layer tellurene in different phases should be explored deeply. In this paper, calculations based on first-principles density functional theory were performed to predict the variation in crystal structures and electronic properties of few-layer tellurene, including the α and β phases. The analyses of mechanical properties show that few-layer α-Te can be more easily deformed in the armchair direction than β-Te owing to its lower Young’s modulus and Poisson’s ratio. The α-Te can be converted to β-Te by in-plane compressive strain. The variations in band structures indicate that the uniaxial strain can tune the band structures and even induce the semiconductor-to-metal transition in both few-layer α-Te and β-Te. Moreover, the compressive strain in the zigzag direction is the most feasible scheme due to the lower transition strain. In addition, few-layer β-Te is more easily converted to metal especially for the thicker flakes considering its smaller band gap. Hence, the strain-induced tunable electronic properties and semiconductor-to-metal transition of tellurene provide a theoretical foundation for fabricating metal–semiconductor junctions and corresponding nano-devices.

Nano-manipulation technology, as a kind of “bottom-up” tool, has exhibited an excellent capacity in the field of measurement and fabrication on the nanoscale. Although variety manipulation methods based on probes and microscopes were proposed and widely used due to locating and imaging with high resolution, the development of non-contacted schemes for these methods is still indispensable to operate small objects without damage. However, optical manipulation, especially near-field trapping, is a perfect candidate for establishing brilliant manipulation systems. This paper reports about simulations on the electric and force fields at the tips of metallic probes irradiated by polarized laser outputted coming from a scanning near-field optical microscope probe. Distributions of electric and force field at the tip of a probe have proven that the polarized laser can induce nanoscale evanescent fields with high intensity, which arouse effective force to move nanoparticles. Moreover, schemes with dual probes are also presented and discussed in this paper. Simulation results indicate that different combinations of metallic probes and polarized lasers will provide diverse near-field and corresponding optical force. With the suitable direction of probes and polarization direction, the dual probe exhibits higher trapping force and wider effective wavelength range than a single probe. So, these results give more novel and promising selections for realizing optical manipulation in experiments, so that distinguished multi-functional manipulation systems can be developed.

Nanowire interconnection is the basis for the construction and integration of micro-nano functional devices. But so far, it is still difficult to achieve a reliable interconnection of metal oxide nanowires. This letter proposes an approach for soldering ZnO nanowires through femtosecond laser irradiation of Ag nanoparticles solder. In this paper, the effect of femtosecond laser fluence and irradiation time on the morphology of Ag solders and the interconnection state of ZnO nanowires are studied, respectively. The I-V electrical characterization of nanowire interconnection before and after soldering is completed. The results demonstrate that ZnO nanowires achieve better interconnection. The UV light response of the ZnO-Ag-ZnO interconnection structure after soldering is investigated. The approach confirms the effectiveness of a femtosecond irradiated metal nanoparticles solder to achieve metal oxide interconnection, offering the prospect of more metal oxide nanowires interconnection and device development.

Edges of two-dimensional (2D) materials are generally more chemically reactive than their basal planes. Accordingly, engineering ultrafine edge architectures in 2D semiconductors is a compelling route to boost surface-enhanced Raman scattering (SERS). This work proposes an approach to enhance SERS sensing by fabricating ultrafine nanogroove array (NGA) structures on 2D multilayer 2H-WS2 using femtosecond (fs) laser processing. Based on the fs laser-induced surface plasmon polariton-local near-field (SPP-LNF) effect, NGA structures with ultrafine groove widths are successfully fabricated. The processed regions remain a single-crystalline structure and exhibit “sharp” edges free of obvious amorphous or oxide layers, thereby achieving a breakthrough in non-ablation laser processing of 2D material edges. Compared with the unprocessed 2H-WS2 regions, the NGA regions demonstrate significantly enhanced SERS sensing performance, achieving a detection limit down to 10−9 mol·L−1 for crystal violet (CV) molecules, which is three orders of magnitude lower than that of pristine 2H-WS2. Through combined theoretical and experimental analyses, the enhanced SERS performance of the NGA structures is attributed to the more active molecular adsorption at nanostructure edges and the intrinsic defects associated with sharp edges. This work offers a robust strategy for the controllable fabrication of edge structures and high-performance SERS sensing.