We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The Raman spectroscopy is used to show presence of buffer layer and single layer graphene prior to intercalation. We also present Raman spectra of quasi free standing monolayer and bilayer graphene after hydrogen intercalation at temperatures between 790 and 1510°C. We have found that although the Si-H bonds form at as low temperatures as 790°C, the well developed bond order has been reached only for samples intercalated at temperatures exceeding 1000°C. We also study temporal stability of hydrogen intercalated samples stored in ambient air. The optical spectroscopy shows on a formation of silyl and silylene groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process.

In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

Dynamic mode atomic force microscopy phase imaging is known to produce distinct contrast between graphene areas of different atomic thickness. But the intrinsic complexity of the processes controlling the tip motion and the phase angle shift excludes its use as an independent technique for a quantitative type of analysis. By investigating the relationship between the phase shift, the tip-surface interaction, and the thickness of the epitaxial graphene areas grown on silicon carbide, we shed light on the origin of such phase contrast, and on the complex energy dissipation processes underlying phase imaging. In particular, we study the behavior of phase shift and energy dissipation when imaging the interfacial buffer layer, single-layer, and bilayer graphene regions as a function of the tip-surface separation and the interaction forces. Finally, we compare these results with those obtained on differently-grown quasi free standing single- and bilayer graphene samples.

In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels E v + 0.41 eV, E v + 0.77 eV and E v + 0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.