Despite great challenges, the development of new molecular structures with multiple and even conflicting characteristics are eagerly pursued for exploring advanced applications. To develop high-performance chiral organic semiconducting molecules, a distorted π-system is required for strong coupling with circularly polarized light (CPL), whereas planar π-stacking systems are necessary for high charge-carrier mobility. To address this dilemma, in this work, we introduce a skeleton merging approach through distortion of a perylene diimide (PDI) core with four fused heteroaromatics to form an ortho-π-extended PDI double-[7]heterohelicene. PDI double helicene inherits a high dissymmetry factor from the helicene skeleton, and the extended π-planar system concurrently maintains a high level of charge transport properties. In addition, ortho-π-extension of the PDI skeleton brings about near-infrared (NIR) light absorption and ambipolar charge transport abilities, endowing the corresponding organic phototransistors with high photoresponsivity of 450 and 120 mA W⁻¹ in p- and n-type modes respectively, along with a high external quantum efficiency (89%) under NIR light irradiations. Remarkably, these multiple characteristics enable high-performance broadband CPL detections up to NIR spectral region with chiral organic semiconductors.

Polymer field-effect transistors with a field-effect mobility of $\mu \approx 0.3{\mathrm{cm}}^2{\mathrm{s}}^{-1}{\mathrm{V}}^{-1}$ have been demonstrated using regioregular poly(3-hexylthiophene) (rr-P3HT). Devices were fabricated by dip coating the semiconducting polymer followed by annealing at $150°\mathrm{C}$ for $10\min$ . The heat annealed devices exhibit an increased field-effect mobility compared with the as-prepared devices. Morphology studies and analysis of the channel resistance demonstrate that the annealing process increases the crystallinity of rr-P3HT and improves the contact between the electrodes and the P3HT films, thereby increasing the field-effect mobility of the films.

We fabricate field-effect transistors (FETs) by depositing a regioregular poly(3-hexylthiophene) (RR-P3HT) active layer via different preparation methods. The solvent used in the polymer film deposition and the deposition technique determine the film microstructure, which ranges from amorphous or granular films to a well-defined fibrillar texture. The crystalline ordering of RR-P3HT into fibrillar structures appears to lead to optimal FET performances, suggesting that fibrils act as efficient “conduits” for the charge carrier transport. Treating the silicon oxide gate insulator with hexamethyldisilazane enhanced the FET performance.