The interfacial mechanics and electrical properties of SiC reinforced copper matrix composites were studied via the first principles method. The work of adhesion (W_ad) and the interfacial energies were calculated to evaluate the stabilities of the SiC/Cu interfacial models. The carbon terminated (CT)-SiC/Cu interfaces were predicted to be more stable than those of the silicon terminated (ST)-SiC/Cu from the results of the W_ad and interfacial energies. The interfacial electron properties of SiC/Cu were studied via charge density distribution, charge density difference, electron localized functions and partial density of the state. Covalent C–Cu bonds were formed based on the results of electron properties, which further explained the fact that the interfaces of the CT-SiC/Cu are more stable than those of the ST-SiC/Cu. The interfacial mechanics of the SiC/Cu were investigated via the interfacial fracture toughness and ultimate tensile stress, and the results indicate that both CT- and ST-SiC/Cu interfaces are hard to fracture. The ultimate tensile stress of the CT-SiC/Cu is nearly 23 GPa, which is smaller than those of the ST-SiC/Cu of 25 GPa. The strains corresponding to their ultimate tensile stresses of the CT- and ST-SiC/Cu are about 0.28 and 0.26, respectively. The higher strains of CT-SiC/Cu indicate their stronger plastic properties on the interfaces of the composites.

The interfacial mechanics and electrical properties of the SiC reinforced copper matrix composites were studied via the first principles method. The work of adhesion (Wad) and the interfacial energies were calculated to evaluate the stabilities of the SiC/Cu interfacial models. The carbon terminated (CT)-SiC/Cu interfaces were predicted more stable than those of the silicon terminated (ST)-SiC/Cu from the results of the Wad and interfacial energies. The interfacial electron properties of SiC/Cu were studied via the charge density distribution, charge density difference, electron localized functions and partial density of the state. The covalent C-Cu bonds were formed based on the results of the electron properties, which further explained the fact that the interfaces of the CT-SiC/Cu are stable than those of the ST-SiC/Cu. The interfacial mechanics of the SiC/Cu were investigated via the interfacial fracture toughness and ultimate tensile stress, and the results indicate that both CT- and ST-SiC/Cu interfaces are hard to fracture. The ultimate tensile stress of the CT-SiC/Cu is nearly 23GPa, which is smaller than those of the ST-SiC/Cu of 25 GPa. The strains corresponding to their ultimate tensile stresses of the CT- and ST-SiC/Cu are about 0.28 and 0.26, respectively. The higher strains of CT-SiC/Cu indicate their stronger plastic properties on the interfaces of the composites.

The charge communications have been widely existed in the metal materials when they are under the processing, the modeling and the failing. We studied the interfacial charge transformation of the TiB₂/Cu composites via the first principles method. The layer thickness was predicted by the interfacial charge communications performed on the regions of the TiB₂/Cu interfaces. The layer thickness of the Ti-terminated (TT)TiB₂/Cu were predicted longer than those of the B-terminated(BT) TiB₂/Cu and contrasting with their average vales as 0.75 (nm) and 0.65 (nm), respectively. The Mulliken population was applied to investigate the bond length, bond population and charge transformation of the six TiB₂/Cu models. The Ti-Cu bond was only detected in TT-HCP interfaces among the all TT-TiB₂/Cu models, which was further confirmed that the metallic bond of the Ti-Cu with the bond length and population as 2.5 Å and 0.22, respectively. Nevertheless, the B-Cu bond were detected in all BT-TiB₂/Cu models, and the bond length and population higher than those of B-Cu bond in chemical complexes. The 5 atomic layers were involved in quantitative analyses of the interfacial charge transformation. The results indicate that the charges lost by interfacial Ti atom were inequivalent obtained by Cu and B atoms which nearby the interfacial Ti atoms of the TT-TiB₂/Cu. Comparing with the BT-TiB₂/Cu models, the charges acquired by the interfacial B atom were most from the Ti and less from the Cu atoms surrounded the interfacial B atoms.