Recently, the research in solution-based, small-molecule organic semiconductors has achieved great progress, although their application in organic electronics devices is still restricted by a variety of issues, including crystal misorientation, morphological nonuniformity and low charge-carrier mobility. In order to overcome these issues, hybrid material systems that incorporate both organic semiconductors and additives have been successfully demonstrated to control crystal growth and charge transport of the organic semiconductors. In this work, we first review the recent advances in the charge-carrier mobility of the organic semiconductors, followed by a comparison of the different additives that have been reportedly blended with the semiconductors, including polymeric additives, small-molecule additives and nanoparticle based additives. Then we will review the important nanoparticles employed as additives to blend with solution-based, organic semiconductors, which effectively improved the semiconductor crystallization, enhanced film uniformity and increased charge transport. By discussing specific examples of various well-known organic semiconductors such as 6, 13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene), we demonstrate the essential relationship among the crystal growth, semiconductor morphology, dielectric properties, and charge-carrier mobilities. This work sheds light on the implementation of nanoparticle additives in high-performance organic electronics device application.

Advanced micro/nano-flexible sensors, displays, electronic skins, and other related devices provide considerable benefits compared to traditional technologies, aiding in the compactness of devices, enhancing energy efficiency, and improving system reliability. The creation of cost-effective, scalable, and high-resolution fabrication techniques for micro/nanostructures built from optoelectronic materials is crucial for downsizing to enhance overall efficiency and boost integration density. The electrohydrodynamic jet (EHD) printing technology is a novel additive manufacturing process that harnesses the power of electricity to create fluid motion, offering unparalleled benefits and a diverse spectrum of potential uses for microelectronic printing in terms of materials, precision, accuracy, and cost-effectiveness. This article summarizes various applications of EHD printing by categorizing them as zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) printing materials. Zero-dimensional (quantum dot) materials are predominantly utilized in LED applications owing to their superb optoelectronic properties, high color fidelity, adjustable color output, and impressive fluorescence quantum yield. One- and two-dimensional materials are primarily employed in FET and sensor technologies due to their distinctive physical structure and exceptional optoelectronic properties. Three-dimensional materials encompass nanometals, nanopolymers, nanoglass, and nanoporous materials, with nanometals and nanopolymers finding widespread application in EHD printing technology. We hope our work will facilitate the development of small-feature-size, large-scale flexible electronic devices via EHD printing.

Two-dimensional (2D) organic–inorganic hybrid perovskites, which possess outstanding optical and electrical properties, are promising semiconductor materials that have attracted significant interest in widespread applications. The frictional behavior of 2D perovskite materials with other transparent conductive materials, such as indium tin oxide (ITO), offers promising developments in optoelectronic devices. Therefore, the understanding of this frictional behavior is essential. Atomic force microscopy (AFM) is employed here to measure the frictional behavior between the (001) plane of the 2D organic–inorganic hybrid (C₄H₉NH₃)₂PbBr₄ perovskite and the (111) plane of the ITO. The experimental analyses characterizing the nature of the friction in a single-crystalline heterojunction are reported. Based on the results of the analyses of interfaces between 2D monolayer perovskites and ITO, a strong anisotropy of friction is clearly demonstrated. The anisotropy of friction is observed as a four-fold symmetry with low a frictional coefficient, 0.035, in misaligned contacts, and, 0.015, in aligned contacts in the heterojunction configuration. In addition, atomistic simulations reveal underlying frictional mechanisms in the dynamical regimes. A new phenomenon discovered in the studies establishes that the measured frictional anisotropy surprisingly depends on the number of atomic layers in the 2D perovskite. The frictional anisotropy decreases significantly with the increase in the number of layers up to 16 layers, and then it becomes independent of the thickness. Our results are predicted to be of a general nature and should be applicable to other 2D hybrid perovskite heterojunction configurations, and thus, furthers the development of adaptive and stretchable optoelectronic nanodevices.