Yanghui Liu

Prof. Dr. Yanghui Liu

orcid

Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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9 May 2016 in Advanced Materials
Verified
Journal Article
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CWChang Jin Wan
Chang Jin Wan
YLYanghui Liu
Yanghui Liu
PFPing Feng
Ping Feng
WWWei Wang
Wei Wang
LZLiqiang Zhu
Liqiang Zhu
QWQing Wan
Qing Wan

4 August 2019 in Advanced Materials Technologies
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Journal Article
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Haifeng LingHaifeng Ling
Haifeng Ling
NWNaixiang Wang
Naixiang Wang
AYAnneng Yang
Anneng Yang
YLYanghui Liu
Yanghui Liu
JSJiajun Song
Jiajun Song
FYFeng Yan
Feng Yan

26 October 2020 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
JGJianmiao Guo
Jianmiao Guo
YLYanghui Liu
Yanghui Liu
YLYingtao Li
Yingtao Li
FLFangzhou Li
Fangzhou Li
FHFeng Huang
Feng Huang

14 June 2021 in Advanced Functional Materials
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Journal Article
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JGJianmiao Guo
Jianmiao Guo
YLYanghui Liu
Yanghui Liu
FZFeichi Zhou
Feichi Zhou
FLFangzhou Li
Fangzhou Li
YLYingtao Li
Yingtao Li
FHFeng Huang
Feng Huang

5 October 2023 in IEEE Electron Device Letters
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Journal Article
Closed access
JLJiarong Liang
Jiarong Liang
FLFangzhou Li
Fangzhou Li
GTGuowu Tang
Guowu Tang
YLYanghui Liu
Yanghui Liu
DZDan Zhang
Dan Zhang
WZWei Zheng
Wei Zheng
In this work, a modified solution technique for synthesizing Ga 2 O 3 films is presented, which aims at fabricate high performance deep-ultraviolet (DUV) photovoltaic photodetectors (PDs). Through a selection of low boiling point organic solvent and high temperature heat treatment at 800 °C, the growth process of the films is optimized, with the single-crystal-oriented Ga 2 O 3 films synthesized on GaN substrate. A Pt/Ga 2 O 3 /GaN photodetector based on the film is fabricated, which exhibits a high photoresponsivity of 11.05 mA/W and a short decay time less than 48 ms under DUV irradiation and 0 V bias. Furthermore, tests on multiple devices fabricated by the same method at 0 V bias show a smallest ratio of 9.29% referring to the standard deviation of photocurrent to the average of the photocurrent (the ratio is defined as the coefficient of variation). It indicates that the improved solution technology for synthesizing Ga 2 O 3 films for the DUV photovoltaic PDs is reliable and reproducible. This research can serve as a reference for fabricating DUV photovoltaic PDs with high-performance based on solution-processed Ga 2 O 3 films.

26 October 2022 in Advanced Intelligent Systems
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Journal Article
Open access
FLFang Zhou Li
Fang Zhou Li
HLHong Rui Liu
Hong Rui Liu
JGJian Miao Guo
Jian Miao Guo
XZXin Yi Zhou
Xin Yi Zhou
KLKe Kang Liu
Ke Kang Liu
YLYanghui Liu
Yanghui Liu
Nociceptors are kinds of sensory neurons that send warning information to the central nervous system in response to noxious stimuli. Thermal nociception happens as the thermal stimulus exceeds 45 °C as this temperature is perceived to be potentially harmful. Simulating this function is of great significance to developing bioinspired electronic skins and humanoid robots, which thus creates more demands for electronic devices that can simulate thermal nociception. Herein, an artificial thermal nociceptor (ATN) is fabricated by integrating a temperature sensor and a synaptic transistor, which can simulate the thermal pain threshold of the human body and operates in a very similar way as the transient receptor potential vanilloid 1 (TRPV1). For this ATN, the function of temperature sensing is realized by a graphite–polydimethylsiloxane (Gr–PDMS) composite temperature sensor, and the synaptic functions, as well as nociceptor features, are emulated through a synaptic transistor using xanthan gum polysaccharide electrolyte as gate dielectric, providing energy‐efficient building blocks for brain‐inspired computation systems. In a word, the ATN proposed can help to open a new avenue and provides more possibilities in the design of artificial sensory systems with the functions of temperature perception and thermal feedback.