I am a materials physicist specializing in the design, growth, and functional characterization of epitaxial ferroelectric and multiferroic oxide thin films, with emphasis on pulsed laser deposition (PLD) and strain/interface engineering. My work bridges fundamental ferroic phenomena with device-relevant functionality for emerging electronic technologies, including low-power logic, multistate memory, neuromorphic computing, and advanced sensing systems.
Advanced Interface and Strain Engineering:
Demonstrated methods to stabilize and tailor ferroic states in thin films and multilayers, enabling enhanced performance in memory and logic device architectures.
Breakthroughs in Ferroelectric Hafnia-Based Systems:
Showed that Hf0.5Zr0.5O2 (HZO) ultrathin films can be grown at CMOS-compatible temperatures (400°C) with intrinsic ferroelectricity, eliminating the need for post-annealing or wake-up training.
→ Impact: Enables integration of ferroelectricity directly into silicon microelectronics, advancing energy-efficient and scalable memory technologies.
Functional Devices for Next-Generation Electronics:
Developed concepts for multistate memory, negative capacitance transistors, and artificial synapses for neuromorphic computing, supporting emerging non-von Neumann architectures.
Technology-Oriented Sensor Innovation:
Coordinated the development of pyroelectric sensors and energy harvesting elements on silicon, resulting in patents, journal publications, and demonstrator devices.
I am a materials physicist specializing in the design, growth, and functional characterization of epitaxial ferroelectric and multiferroic oxide thin films, with emphasis on pulsed laser deposition (PLD) and strain/interface engineering. My work bridges fundamental ferroic phenomena with device-relevant functionality for emerging electronic technologies, including low-power logic, multistate memory, neuromorphic computing, and advanced sensing systems.
Advanced Interface and Strain Engineering:
Demonstrated methods to stabilize and tailor ferroic states in thin films and multilayers, enabling enhanced performance in memory and logic device architectures.
Breakthroughs in Ferroelectric Hafnia-Based Systems:
Showed that Hf0.5Zr0.5O2 (HZO) ultrathin films can be grown at CMOS-compatible temperatures (400°C) with intrinsic ferroelectricity, eliminating the need for post-annealing or wake-up training.
→ Impact: Enables integration of ferroelectricity directly into silicon microelectronics, advancing energy-efficient and scalable memory technologies.
Functional Devices for Next-Generation Electronics:
Developed concepts for multistate memory, negative capacitance transistors, and artificial synapses for neuromorphic computing, supporting emerging non-von Neumann architectures.
Technology-Oriented Sensor Innovation:
Coordinated the development of pyroelectric sensors and energy harvesting elements on silicon, resulting in patents, journal publications, and demonstrator devices.