This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO ₂ /N ₂ /SO ₂ etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode ${V}_{\textit {TH}}$ with $ < {0}.{09}$ V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors’ knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics.

This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an ${I}_{D,\text {max}}$ of −300 mA/mm and an ${R}_{ \mathrm{ ON}}$ of $27 \Omega \cdot $ mm, a record for metal organic chemical vapor deposition (MOCVD)-grown III-nitride p-FETs. A systematic study on impact of fin width scaling and recess depth in these transistors was conducted. A new SA scaled n-channel p-GaN-gate FET (n-FET) process, compatible with the p-FinFET, demonstrated enhancement-mode (E-mode) n-FETs ( ${L}_{G} = {200}$ nm, ${I}_{D,\text {max}} = {525}$ mA/mm, and ${R}_{ \mathrm{ ON}}={2}.{9}\,\,\Omega \cdot $ mm) on the same epitaxial platform. The p-FETs and n-FETs feature competitive performance in their respective categories and, when taken together, offer a leading solution for GaN CT on a silicon substrate.

The review paper presents a systematic understanding of different synthesis routes to obtain holey graphene, its properties, and key applications in different fields. The article also evaluates the current progress and future opportunities of HG.

We report on the fabrication of sub-20 nm BiFeO₃ (BFO) nanoparticles using a solid-state approach and preferential leching process. The nanoparticles were subsequently used to deposit, through spray pyrolysis, BFO thin films in a rhombohedral (R3c) crystallographic structure. Then, systematic investigations of the optical and the photocatalytic properties were conducted to determine the effects of the particles size, the microstructure and the increased surface area on their catalytic performances. Especially, improved optical properties were observed, with an optical bandgap energy of 2.20 eV compared to reported 2.7 eV for the bulk system. In addition, high optical absorption was obtained in the UV–visible light region reaching up to 90% at 400 nm. The photoelectrochemical measurements revealed a high photocurrent density under visible light irradiation. Besides, density functional theory calculations were performed on both bulk and thin film BFO structures, revealing an interesting comparison of the electronic, magnetic, ferroelectric and optical properties for bulk and thin film BFO systems. Both theoretical and experimental findings show that the alignment of the band edges of BFO thin film is coherent with good photocatalytic water splitting potential, making them desirable photoanode materials.

This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. Advanced microscopy images indicate both the regrown and alloyed contact regions remain structurally intact after prolonged high temperature exposure with no visible degradation in crystallinity or metal composition.

A chemically vapor deposited MoS₂ nanosheets (NSs) is aged in the laboratory at ambient and at 40% average humidity for ~36 months. Nanorods of few microns in length and few nanometers in diameter are found to grow from the MoS₂ seeds. They have been growing as a result of the chemical reaction between the MoS₂ NSs and ambient O₂ and moisture, they exhibit an amorphous phase structure in the stoichiometric form of MoO₃. Density functional theory simulations further reveal the role of H₂O and O₂ in the transformation of the MoS₂ NSs. The adsorption energy of O₂ molecules on the MoS₂ sites is E_ad = −1.09 eV as compared to lowest absolute E_ad = −0.10 eV of H₂O indicating the favorable adsorption of O₂ and subsequent Mo oxidation. This study provides valuable insight into the aging phenomenon of MoS₂ exposed to O₂ and moisture which might limit their application.