How to manipulate the phase separation and molecular arrangement to meet the need of efficient charge generation and extraction remains a long-standing challenge in all-small-molecule organic solar cells (ASM-OSCs). Herein, a small molecule acceptor Y7 as a morphology modulator was incorporated into a B1:BO-4Cl matrix to fabricate ternary ASM-OSCs. Y7 possesses excellent compatibility with the acceptor BO-4Cl but poor compatibility with the donor B1. The two acceptors prefer to form an alloy-like structure in ternary blends due to their good compatibility, which is conducive to fine-tuning the molecular arrangement for facilitating charge extraction. The inferior compatibility originating from the strong intermolecular interaction between Y7 and B1 can provide a driving force to manipulate the phase separation between the donor and acceptor for gaining well-formed nanofibrous and bi-continuous interpenetrating networks, leading to efficient charge separation, transport and collection in ternary blends. The ternary ASM-OSCs with 10 wt% Y7 in acceptors achieve a top-ranked power conversion efficiency of 16.28% with a holistic improvement of short-circuit current density, open-circuit voltage and fill factor. This work opens a new avenue to optimize the morphology for further boosting the performance of OSCs.

Developing nanoelectronic engineering requires two-dimensional (2d) materials with both usable carrier mobility and proper large band-gap. In this study, we present a detailed theoretical investigation of the intrinsic carrier mobilities of buckled 2d GaN. This buckled 2d GaN is accessed by hydrofluorination (FGaNH) and hydrogenation (HGaNH). We predict that the anisotropic carrier mobilities of buckled 2d GaN can exceed those of 2d MoS₂ and can be altered by an alterable surface chemical bond (convert from a Ga–F–Ga bond of FGaNH to a Ga–H bond of HGaNH). Moreover, converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from a p-type-like semiconductor (FGaNH) to an n-type-like semiconductor (HGaNH). These features make buckled 2d GaN a promising candidate for application in future conductivity-adjustable electronics.

The carrier mobility of two-dimensional (2D) materials can be modulated by van der Waals (vdW) interactions in conjunction with structure factors. This paper presents a comprehensive theoretical investigation of the intrinsic carrier mobilities of the flattened 2D GaN-BAs vdW heterostructure (2D GaN-BAs) and the buckled 2D GaN-SiS vdW heterostructure (2D GaN-SiS). Our numerical results reveal that 2D GaN-BAs and 2D GaN-SiS possess dispersive carrier mobilities (24–14200 cm2 V−1 s−1). Notably, compared with monolayer 2D GaN, the interlayer vdW interactions significantly enhance the carrier mobility (μ) of the flattened 2D GaN-BAs, while they substantially suppress the mobility in the buckled 2D GaN-SiS. This study provides a novel perspective on the very fundamental processes understanding the physical mechanism of carrier mobility in vdW heterostructure.