Sergo Rekhviashvili

Prof. Dr. Sergo Rekhviashvili


Research Focus & Metrics

Academic Career Length

30Years (1997-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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12 June 2019 in TURKISH JOURNAL OF PHYSICS
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Journal Article
Open access
SRSergo Rekhviashvili
Sergo Rekhviashvili
APArsen Pskhu
Arsen Pskhu
Praveen AgarwalPraveen Agarwal
Praveen Agarwal
SJShilpi Jain
Shilpi Jain

1 January 2011 in Technical Physics
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Journal Article
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SRSergo Rekhviashvili
Sergo Rekhviashvili
EKE. V. Kishtikova
E. V. Kishtikova
The general form of a differential equation that deduces a size dependence of the surface tension is derived. The well-known Gibbs-Tolman-Koenig-Buff equation for the spherical surface is a particular case of the newly derived one. Analytical solutions to this equation for the spherical, cylindrical, parabolic, and conical surfaces are found.

1 December 2018 in Technical Physics Letters
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APA. V. Pskhu
A. V. Pskhu
SRSergo Rekhviashvili
Sergo Rekhviashvili
A model of forced oscillations of an oscillator based on the fractional integro-differential formalism has been considered. It is shown that this model is in good agreement with the classical model...

1 January 2004 in Technical Physics Letters
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SRSergo Rekhviashvili
Sergo Rekhviashvili
An analog of the Lagrange equation with a fractional derivative with respect to time is derived using the principle of least action. Based on this approach, a new equation of motion is obtained and th

22 November 2020 in Mathematics
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APArsen Pskhu
Arsen Pskhu
SRSergo Rekhviashvili
Sergo Rekhviashvili
We consider a diffusion–wave equation with fractional derivative with respect to the time variable, defined on infinite interval, and with the starting point at minus infinity. For this equation, we solve an asympotic boundary value problem without initial conditions, construct a representation of its solution, find out sufficient conditions providing solvability and solution uniqueness, and give some applications in fractional electrodynamics.

17 February 2012 in Semiconductors
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DGD. S. Gaev
D. S. Gaev
SRSergo Rekhviashvili
Sergo Rekhviashvili
Crack formation in electrochemical porous silicon has been experimentally and theoretically studied. It is established that the kinetics of porous silicon cracking can be described by the S-shaped Weibull distribution. This feature appears to be of general character; it may be observed during crack formation in other porous solid materials.