Nanoscale strain engineering of monolayer graphene is shown to achieve giant pseudo-magnetic fields and valley polarization.

Controlling the density of exciton and trion quasiparticles in monolayer two-dimensional (2D) materials at room temperature by nondestructive techniques is highly desired for the development of future optoelectronic devices. Here, the effects of different orbital angular momentum (OAM) lights on monolayer tungsten disulfide at both room temperature and low temperatures are investigated, which reveal simultaneously enhanced exciton intensity and suppressed trion intensity in the photoluminescence spectra with increasing topological charge of the OAM light. In addition, the trion-to-exciton conversion efficiency is found to increase rapidly with the OAM light at low laser power and decrease with increasing power. Moreover, the trion binding energy and the concentration of unbound electrons are estimated, which shed light on how these quantities depend on OAM. A phenomenological model is proposed to account for the experimental data. These findings pave a way toward manipulating the exciton emission in 2D materials with OAM light for optoelectronic applications.

The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.