Microcombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology^1–4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner^5–7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal–oxide–semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

Silicon modulators are key components to support the dense integration of electro-optic functional elements for various applications. Despite numerous advances in promoting the modulation speed, a bandwidth ceiling emerges in practices and becomes an obstacle toward Tbps-level throughput on a single chip. Here, we demonstrate a compact pure silicon modulator that shatters present bandwidth ceiling to 110 gigahertz. The proposed modulator is built on a cascade corrugated waveguide architecture, which gives rise to a slow-light effect. By comprehensively balancing a series of merits, the modulators can benefit from the slow light for better efficiency and compact size while remaining sufficiently high bandwidth. Consequently, we realize a 110-gigahertz modulator with 124-micrometer length, enabling 112 gigabits per second on-off keying operation. Our work proves that silicon modulators with 110 gigahertz are feasible, thus shedding light on its potentials in ultrahigh bandwidth applications such as optical interconnection and photonic machine learning.

Integrated microwave photonic filters (IMPFs) are capable of offering unparalleled performances in terms of superb spectral fineness, broadband, and more importantly, the reconfigurability, which encounter the trend of the next-generation wireless communication. However, to achieve high reconfigurability, previous works should adopt complicated system structures and modulation formats, which put great pressure on power consumption and controlment, and, therefore, impede the massive deployment of IMPF. Here, we propose a streamlined architecture for a wideband and highly reconfigurable IMPF on the silicon photonics platform. For various practical filter responses, to avoid complex auxiliary devices and bias drift problems, a phase-modulated flexible sideband cancellation method is employed based on the intensity-consistent single-stage-adjustable cascaded-microring (ICSSA-CM). The IMPF exhibits an operation band extending to millimeter-wave (≥30 GHz), and other extraordinary performances including high spectral resolution of 220 MHz and large rejection ratio of 60 dB are obtained. Moreover, Gb/s-level RF wireless communications are demonstrated for the first time towards real-world scenarios. The proposed IMPF provides broadband flexible spectrum control capabilities, showing great potential in the next-generation wireless communication.

Optical evanescent sensors can non-invasively detect unlabeled nanoscale objects in real time with unprecedented sensitivity, enabling a variety of advances in fundamental physics and biological applications. However, the intrinsic low-frequency noise therein with an approximately 1/f-shaped spectral density imposes an ultimate detection limit for monitoring many paramount processes, such as antigen-antibody reactions, cell motions and DNA hybridizations. Here, we propose and demonstrate a 1/f-noise-free optical sensor through an up-converted detection system. Experimentally, in a CMOS-compatible heterodyne interferometer, the sampling noise amplitude is suppressed by two orders of magnitude. It pushes the label-free single-nanoparticle detection limit down to the attogram level without exploiting cavity resonances, plasmonic effects, or surface charges on the analytes. Single polystyrene nanobeads and HIV-1 virus-like particles are detected as a proof-of-concept demonstration for airborne biosensing. Based on integrated waveguide arrays, our devices hold great potentials for multiplexed and rapid sensing of diverse viruses or molecules.

Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, developing coherent systems in integrated photonics comes at great expense in hardware integration and energy efficiency. Here we demonstrate a high-coherence parallelization strategy for advanced integrated coherent systems at minimal cost. By using a self-injection locked microcomb to injection lock distributed feedback lasers, we achieve a record high on-chip gain of 60 dB with no degradation in coherence. This strategy enables highly coherent channels with linewidths down to 10 Hz and power over 20 dBm. The overall electrical-to-optical efficiency reaches 19%, comparable to that of advanced semiconductor lasers. This method supports a silicon photonic communication link with an unprecedented data rate beyond 60 Tbit/s and reduces phase-related DSP consumption by 99.99999% compared to traditional III-V laser pump schemes. This work paves the way for realizing scalable, high-performance coherent integrated photonic systems, potentially benefiting numerous applications.

A tapered asymmetric directional coupler is considered as a promising structure for high tolerance and efficient on-chip mode (de)multiplexers. However, the optimum geometry parameters selection still remains empirical without specific numerical guidance. Here, an in-depth analysis has been carried out based on coupling mode theory. A theoretical model is built aiming to combine the consideration of device efficiency, mode crosstalk and fabrication tolerance. According to that, mode (de)multiplexers ( $\text{TE}_0 \text{-TE}_1,\text{ TE}_0 \text{-TE}_2,\text{ TM}_0 \text{-TM}_1,\text{ TM}_0 \text{-TM}_2$ ) with broad operation wavelength (C+L band) and low mode crosstalk (minimum -30 dB) are fabricated. The proposed theoretical model can serve as a guideline for the design and optimization of the tapered ADC based mode (de)multiplexers.