Adjusting the microstructure through the deformation process is one of the ways to improve the properties of Mg alloys. Most studies have focused on the influence of the microstructure after deformation treatment on the mechanical properties of Mg alloys. In this paper, extruded and forged Mg-Gd-Y-Nd-Zr alloys were selected to investigate the corrosion performance of two deformed magnesium alloys immersed in 0.6 M NaCl solution using a hydrogen evolution test, a weight loss test, an immersion experiment, and an electrochemical test. The results showed that WE43 alloys undergoing different deformation treatments presented different microstructures, which led to different corrosion behaviors and corrosion resistance. The extruded WE43 alloy showed uniform corrosion, while the forged WE43 alloy suffered severe local galvanic corrosion. Meanwhile, the corrosion rate of the forged WE43 alloy was about four times faster than that of the extruded WE43 alloy.

The power consumption is challenging the next-generation electronic and optoelectronic devices. In this Letter, the n-type source-gated transistor (SGT) enabled by CdS nanobelt is investigated in detail, demonstrating the expected low power consumption, along with impressive photodetection performance. The SGT is realized by deliberately introducing the Schottky barrier at the source of the staggered-electrode transistor, exhibiting a small saturated voltage (VSAT) of 0.84 ± 0.21 V and a remarkably low power consumption of 7.56 ± 4.01 nW. Under illumination, the as-constructed SGT also shows a low power consumption of 7.58 nW, which is much lower than that of the most reported phototransistors operating in the saturated region. Moreover, the source-gated phototransistor also shows a high responsivity of 2.54 × 103 A W−1 and a high detectivity of 6.72 × 1012 Jones. All results imply that the as-constructed low-power-consumption source-gated phototransistor promises next-generation high-performance electronic and optoelectronic devices.