Open access peer-reviewed chapter

Stannous sulphide (SnS) thin films have been synthesised using two different solutions. The solutions were prepared by the dilution of SnCl₂ and thiourea in distilled water and methanol separately. The effects of solvents and deposition time on the properties of the prepared thin films are investigated. X-ray diffraction analysis revealed that the variation of the solvent and the deposition durations alters the structure of the prepared films. The films analysis by scanning electron microscope showed that the SnS films prepared with methanol are more dense and smooth than the SnS films prepared with distilled water. The resistivity depends on the used solvent and their growth duration. The elemental composition of the films deposited during 30 min with methanol indicate that SnS is quasi-stoichiometric, while those prepared with distilled water are slightly Sn rich. We have also found that the films deposited with distilled water are n-type, whereas those prepared with methanol are p-type.

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO₂: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co²⁺]/[Sn⁴⁺]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO₂ phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (N_v), surface carrier concentration density (N_s) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10^-2 Ω.cm, and a high Hall mobility of 15.13×10² cm².V^-1.s^-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.