Extreme ultraviolet (EUV) lithography plays a vital role in the advanced technology nodes of integrated circuits manufacturing. Source mask optimization (SMO) is a critical resolution enhancement technique (RET) or EUV lithography. In this paper, an SMO method for EUV lithography based on the thick mask model and social learning particle swarm optimization (SL-PSO) algorithm is proposed to improve the imaging quality. The thick mask model's parameters are pre-calculated and stored, then SL-PSO is utilized to optimize the source and mask. Rigorous electromagnetic simulation is then carried out to validate the optimization results. Besides, an initialization parameter of the mask optimization (MO) stage is tuned to increase the optimization efficiency and the optimized mask's manufacturability. Optimization is carried out with three target patterns. Results show that the pattern errors (PE) between the print image and target pattern are reduced by 94.7%, 76.9%, 80.6%, respectively.

Source mask optimization (SMO) is one of the indispensable resolution enhancement techniques to guarantee the image fidelity and process robustness for the 2Xnm technology node and beyond. The optimization capacity and convergence efficiency of SMO are important, especially for full-chip SMO. An SMO method using the covariance matrix adaptation evolution strategy (CMA-ES), together with a new source representation method, is proposed in this paper. Based on the forward vector imaging formulation, the encoding and decoding methods of the source and the mask, and the constructed merit function, the source and the mask are optimized using the CMA-ES algorithm. The solution search space and the search step size are adaptively updated during the optimization procedure. Considering the sparsity of the optimal source, the source is represented by a set of ideal point sources with unit intensity and adjustable positions. The advantageous spatial frequency components of the source for imaging performance improvement are identified through the aggregation of the point sources. Simulations and comparisons verify the superior optimization capacity and convergence efficiency of the proposed method.

Optical proximity correction (OPC) is a widely used resolution enhancement technique (RET) in optical lithography to improve the image fidelity and process robustness. The efficiency of OPC is very important, especially for full-chip modification with complicated circuit layout in advanced technology nodes. An efficient OPC method based on virtual edge and mask pixelation with two-phase sampling is proposed in this paper. All kinds of imaging distortions are classified into two categories of imaging anomalies, the inward shrinkage anomaly and the outward extension anomaly. The imaging anomalies are detected around the corners and along the boundaries of the mask features with several anomaly detection templates. Virtual edges are adaptively generated according to the local imaging anomalies. The virtual edges are shifted to adjust the distribution of transparent regions on the mask and modify the local imaging anomalies. Several constraints and strategies are applied for efficient modifications and global control of the contour fidelity. In addition, the diffraction-limited property of the imaging system is fully utilized to separate the imaging evaluations at a coarse sampling level and the mask modifications at a fine sampling level, through the mask pixelation with two-phase sampling. It accelerates the imaging evaluations and guarantees the modification resolution as well. Simulations and comparisons demonstrate the superior modification efficiency of the proposed method.

Owing to gamma-effect robustness and high-speed imaging capabilities, projector defocusing of binary-coded fringe patterns is by far the most widely used and effective technique in generating sinusoidal fringe patterns for three-dimensional optical topography measurement with digital fringe projection techniques. However, this technique is not trouble-free. It is borne with uncertainty and challenges mainly because it remains somewhat difficult to quantify and ascertain the level of defocus required for desired fidelity in sinuousness of the projected fringe pattern. Too much or too little defocusing will affect the sinuosity accuracy of fringe patterns and consequently jeopardize the quality of the measurement results. In this paper, by combining intrinsic phase spectral sensitivities and normed Fourier transform, a method to quantify the amount of defocus and subsequently select the optimal degree of sinuosity for generating digital sinusoidal fringe patterns with projector defocusing for fringe pattern optical three-dimensional profilometry is proposed. Numerical simulations plus experiments give evidence of the feasibility and validity of the proposed method in enabling an improved digital binary defocusing technique for optical phase-shift profilometry using the digital fringe projection technique.

Extreme ultraviolet (EUV) lithography is essential in the advanced technology nodes. Source mask optimization (SMO) for EUV lithography, especially the heuristic-based SMO, is one of the vital resolution enhancement techniques (RET). In this paper, a fast SMO method for EUV based on dual edge evolution and partial sampling strategies is proposed to improve the optimization efficiency and speed of the heuristic algorithm. In the source optimization (SO) stage, the position and intensity of the source points are optimized in turn. Using the sparsity of the optimized source, a partial sampling encoding method is applied to decrease the variables’ dimension in optimization. In the mask optimization (MO) stage, the main features (MF) and the sub-resolution assistant features (SRAF) are optimized in turn. A dual edge evolution strategy is used in the MF optimization and the partial sampling encoding method is used in SRAF optimization. Besides, the imaging qualities at different focal planes are improved by SRAF optimization. The optimization efficiency is greatly improved by the dimensionality reduction strategies. Simulations are carried out with various target patterns. Results show the superiority of the proposed method over the previous method, especially for large complex patterns.

Source and mask optimization (SMO) is one of the most important resolution enhancement techniques for integrated circuit manufacturing in 2X nm technology node and beyond. Nowadays full-chip SMO is alternatively realized by applying SMO to limited number of selected critical patterns instead of to full-chip area, since it is too computational expensive to be apply SMO in full-chip area directly. The critical patterns are selected by a pattern selection method which enables SMO in full-chip application by balancing the performance and computation consumption. A novel diffraction-based pattern selection method has been proposed in this paper. In this method, diffraction-signatures are sufficiently described with widths in eight selected directions. Coverage rules between the diffraction-signatures are specifically designed. Diffraction-signature grouping method and pattern selection strategy are proposed based on the diffraction-signatures and coverage rules. A series of simulations and comparisons performed using ASML’s Tachyon software, which is one of the state of the art commercial SMO platforms, verify the validity of the proposed method.