Chul-Ho Lee

Prof. Chul-Ho Lee


Research Focus & Metrics

Academic Career Length

19Years (2008-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 September 2020 in Advanced Materials
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Journal Article
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WHWoong Huh
Woong Huh
DLDonghun Lee
Donghun Lee
CLChul-Ho Lee
Chul-Ho Lee

9 March 2017 in Advanced Functional Materials
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Journal Article
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YPYun Hee Park
Yun Hee Park
IJInyoung Jeong
Inyoung Jeong
SBSeunghwan Bae
Seunghwan Bae
HSHae Jung Son
Hae Jung Son
PLPhillip Lee
Phillip Lee
Min Jae KoMin Jae Ko
Min Jae Ko

17 July 2018 in Advanced Materials
Verified
Journal Article
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WHWoong Huh
Woong Huh
SJSeonghoon Jang
Seonghoon Jang
JLJae Yoon Lee
Jae Yoon Lee
DLDonghun Lee
Donghun Lee
JLJung Min Lee
Jung Min Lee
CLChul-Ho Lee
Chul-Ho Lee

27 October 2016 in Nanomaterials
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Journal Article
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JLJae Yoon Lee
Jae Yoon Lee
JSJun-Hwan Shin
Jun-Hwan Shin
GLGwan-Hyoung Lee
Gwan-Hyoung Lee
CLChul-Ho Lee
Chul-Ho Lee
Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

13 September 2021 in Nature Electronics
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DLDonghun Lee
Donghun Lee
JLJea Jung Lee
Jea Jung Lee
YKYoon Seok Kim
Yoon Seok Kim
YKYeon Ho Kim
Yeon Ho Kim
JKJong Chan Kim
Jong Chan Kim
CLChul-Ho Lee
Chul-Ho Lee

5 June 2020 in Science Advances
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Journal Article
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JJJunseok Jeong
Junseok Jeong
QWQingxiao Wang
Qingxiao Wang
JCJanghwan Cha
Janghwan Cha
DJDae Kwon Jin
Dae Kwon Jin
DSDong Hoon Shin
Dong Hoon Shin
Young Joon HongYoung Joon Hong
Young Joon Hong
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.