Jun  Li

Dr. Jun Li


Research Focus & Metrics

Academic Career Length

18Years (2009-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 August 2023 in npj Flexible Electronics
Verified
Journal Article
Open access
PDF file
LCLian Cheng
Lian Cheng
JLJun Li
Jun Li
AGAiying Guo
Aiying Guo
JZJianhua Zhang
Jianhua Zhang
Surface electromyography (sEMG) is used to detect and analyze human muscle biopotential. Recently, flexible noninvasive electrodes (FNEs) have emerged to extract bioelectrical signals from individual bodies. For FNEs to be deployed as a central component of physiological signal acquisition, the quest for elevated signal-to-noise ratio and density is compelling owing to the small amplitude of sEMG. Herein, we review recent progress in FNEs for sEMG acquisition. We summarize the needed properties of FNEs, compare the differences between passive electrodes and active electrodes and exemplify applications of FNEs. We also conclude the current challenges and future opportunities in sEMG acquisition.

4 August 2020 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
JLJun Li
Jun Li
QCQi Chen
Qi Chen
WFWenhui Fu
Wenhui Fu
YYYaohua Yang
Yaohua Yang
WZWenqing Zhu
Wenqing Zhu
JZJianhua Zhang
Jianhua Zhang

9 December 2019 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
YZYouhang Zhou
Youhang Zhou
JLJun Li
Jun Li
YYYaohua Yang
Yaohua Yang
QCQi Chen
Qi Chen
JZJian-Hua Zhang
Jian-Hua Zhang

17 February 2020 in Advanced Electronic Materials
Verified
Journal Article
Closed access
PDF file
JLJun Li
Jun Li
DJDongliang Jiang
Dongliang Jiang
YYYaohua Yang
Yaohua Yang
YZYouhang Zhou
Youhang Zhou
QCQi Chen
Qi Chen
JZJianhua Zhang
Jianhua Zhang

16 April 2012 in Vacuum
Verified
Journal Article
Closed access
JLJun Li
Jun Li
FZFan Zhou
Fan Zhou
HLHua-Ping Lin
Hua-Ping Lin
WZWen-Qing Zhu
Wen-Qing Zhu
JZJian-Hua Zhang
Jian-Hua Zhang
ZZZhi-Lin Zhang
Zhi-Lin Zhang

27 December 2017 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
DZDe-Yao Zhong
De-Yao Zhong
JLJun Li
Jun Li
CZCheng-Yu Zhao
Cheng-Yu Zhao
CHChuan-Xin Huang
Chuan-Xin Huang
JZJiang-Hua Zhang
Jiang-Hua Zhang
ZZZhi-Lin Zhang
Zhi-Lin Zhang
In this paper, boron-doped indium-zinc-oxide (InZnO) thin-film transistors (BIZO TFTs) were fabricated by solution process. The electrical performance and stability under the negative bias illumination stress (NBIS) have been greatly improved by B doping. The BIZO TFT with 5 mol.% B doping ratio shows a superior electrical performance with a field-effect mobility of 10.15 cm 2 /V · s, a threshold voltage of 3.29 V, a subthreshold swing of 0.35 V/decade, and an ON/OFF ratio of 10 8 . Furthermore, the 5 mol.% BIZO TFT shows only a -1.59 V shift of the threshold voltage, compared with a large negative shift of -4.24 V for pure IZO TFTs. The enhancement of electrical performance and stability under NBIS is due to the reduction of oxygen vacancies, which are suppressed by B doping. The density of states is calculated to further validate the improved electrical performance and NBIS stability of BIZO TFTs.