High‐voltage enhancement‐mode (E‐mode) gallium nitride (GaN) high electron mobility transistor (HEMT) is a superior candidate to enable higher efficiency and higher power density when compared with silicon power devices in power converter applications. However, the dynamic problem affects the conduction loss of the converter and remains one of the major issues that must be resolved. In this study, a comprehensive experimental evaluation and analysis method of the temperature‐dependent dynamic of GaN HEMT in a circuit level is proposed. A commercial E‐mode GaN HEMT (GS66508T) is used as a sample to study the temperature‐dependent dynamic using a double‐pulse‐tester. The temperature‐dependent dynamic under different DC‐link voltages and different load currents are studied and the results show a non‐monotonic temperature‐dependence of the dynamic . It is concluded that the temperature dependence of the buffer‐induced trapping and de‐trapping effect, and the temperature dependence of electron mobility together influence the dynamic of E‐mode GaN HEMT device during operation. This finding is important since in converter applications the devices are typically operating at elevated temperatures. The proposed comprehensive experimental method can be used to estimate and analyse the dynamic characteristics of other GaN devices.

The impact of transient ionizing radiation effects on a 4-Mb static random access memory (SRAM) circuit which has an input–output (IO) supply voltage and a core supply voltage was studied. The experimental results indicate that a longer time is required to restore minimal operating voltage for core supply voltage. Based on the 180-nm bulk CMOS technology, 3-D mode numerical simulations with technology computer-aided design (TCAD) show that the parasitic bipolar effect plays a significant role in discrepancy in the recovery process between supply voltages. This effect will be discussed in depth in this article, and the simulation results illustrate that the n-well contact has a great impact on the operation mode of parasitic bipolar. Meanwhile, the supply voltage disturbance mitigation methods are presented through improving power supply voltage and placing more n-well contacts.

The short circuit withstand energy (SCWE) variations, and short circuit withstand time (SCWT) variations, of planar and trench silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices are studied after exposure to a total ionizing dose (TID). The results for ON bias are explored. The SCWE and SCWT are studied for planar and trench SiC MOSFET power devices tested for TID with gamma irradiation. A higher degradation phenomenon for the SCWE and SCWT are observed for the planar SiC MOSFET. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.

The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown for SiC MOSFET power devices with planar, trench and double trench structures tested for total ionizing dose (TID). A higher degradation of the switching characteristics was observed for the double trench structure. The physical mechanisms for these switching characteristics variations were analyzed. In addition, they were confirmed by technology computer-aided design (TCAD) simulation.

This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 10¹¹ rad(Si)/s in experiments, and the number of data errors shows a nonlinear increasing trend with the increase in dose rate and supply voltage. Three-dimensional technology computer-aided design (TCAD) simulations were conducted to analyze the transient photocurrent and charge collection mechanism at advanced process. The simulation results indicated that the charge collection efficiency is heightened with an increase in supply voltage, resulting in the higher photocurrent. This plays a major role in the process of charge collection for Ultra-Thin Body and Buried oxide (UTBB) FDSOI technology. The investigation into the high-dose-rate transient ionizing radiation effect (HDR-TIRE) in Nano-Scale FDSOI DFFs will aid in the assessment and application of advanced integrated circuits in aerospace.

A novel SiC double-trench MOSFET (DT-MOS) with source-recessed structure is proposed and investigated via Sentaurus TCAD simulations in this paper. The lateral resistance area beneath the source region is completely eliminated, thus suppressing the turn-on of the parasitic npn transistor effectively. As a result, the short-circuit withstanding time, the single pulse avalanche energy ( E _av ) under unclamped inductive switching test and the threshold voltage for single-event burnout are improved by 28%, 14% and 67%, respectively, when compared to the traditional state-of-the-art SiC DT-MOS, indicating its great potential for harsh environment applications.